The role of arsenic in the operation of sulfur-based electrical threshold switches

• Published in: Nature communications Vol. 14; no. 1; pp. 6095 - 10
• Main Authors: Wu, Renjie, Gu, Rongchuan, Gotoh, Tamihiro, Zhao, Zihao, Sun, Yuting, Jia, Shujing, Miao, Xiangshui, Elliott, Stephen R., Zhu, Min, Xu, Ming, Song, Zhitang
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 29.09.2023; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301/1005/1007; 639/925/357; Arsenic; Bonding strength; Chemical bonds; Crystal defects; Crystallization; Divacancies; Humanities and Social Sciences; Leakage current; multidisciplinary; Science; Science (multidisciplinary); Selectors; Semiconductors; Service life assessment; Silicon carbide; Sulfur; Switching
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-023-41643-6

Arsenic is an essential dopant in conventional silicon-based semiconductors and emerging phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the latter. Here, we fabricate chalcogenide-based ovonic threshold switching (OTS) selectors, which are key units for suppressing sneak currents in 3D PCM arrays, with various As concentrations. We discovered that incorporation of As into GeS brings >100 °C increase in crystallization temperature, remarkably improving the switching repeatability and prolonging the device lifetime. These benefits arise from strengthened As-S bonds and sluggish atomic migration after As incorporation, which reduces the leakage current by more than an order of magnitude and significantly suppresses the operational voltage drift, ultimately enabling a back-end-of-line-compatible OTS selector with >12 MA/cm 2 on-current, ~10 ns speed, and a lifetime approaching 10 10 cycles after 450 °C annealing. These findings allow the precise performance control of GeSAs-based OTS materials for high-density 3D PCM applications. Spin defects in semiconductors are promising for quantum technologies but understanding of defect formation processes in experiment remains incomplete. Here the authors present a computational protocol to study the formation of spin defects at the atomic scale and apply it to the divacancy defect in SiC.