纳米SiO2复合对铝合金表面微弧氧化层生长动力学的影响

通过在微弧氧化电解液中添加纳米SiO2颗粒配制纳米电解液,在铝合金表面制备了纳米复合微弧氧化层,考察了恒电压和恒电流两种模式下纳米SiO2复合对微弧氧化层生长动力学的影响。结果表明,恒电压模式下,纳米SiO2复合大幅度提高了生长电流和微弧氧化层生长速率;恒电流模式下,纳米SiO2复合提高了微弧氧化层生长速率,电流效率提高。纳米SiO2颗粒在纳米复合微弧氧化层中掺杂,形成杂质能级,并且降低了微弧氧化层材料的禁带宽度,促进了微弧氧化电击穿过程,是纳米SiO2复合促进微弧氧化层生长的主要原因。...

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Bibliographic Details
Published in航空材料学报 Vol. 32; no. 1; pp. 68 - 71
Main Author 马世宁 索相波 邱骥 朱海燕
Format Journal Article
LanguageChinese
Published 装甲兵工程学院装备再制造工程系,北京,100072%酒泉卫星发射中心,甘肃酒泉,732750 2012
Subjects
微弧氧化
掺杂
生长动力学
纳米复合
铝合金
微弧氧化
生长动力学
掺杂
纳米复合
铝合金
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ISSN1005-5053
DOI10.3969/j.issn.1005-5053.2012.1.014

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Summary:通过在微弧氧化电解液中添加纳米SiO2颗粒配制纳米电解液,在铝合金表面制备了纳米复合微弧氧化层,考察了恒电压和恒电流两种模式下纳米SiO2复合对微弧氧化层生长动力学的影响。结果表明,恒电压模式下,纳米SiO2复合大幅度提高了生长电流和微弧氧化层生长速率;恒电流模式下,纳米SiO2复合提高了微弧氧化层生长速率,电流效率提高。纳米SiO2颗粒在纳米复合微弧氧化层中掺杂,形成杂质能级,并且降低了微弧氧化层材料的禁带宽度,促进了微弧氧化电击穿过程,是纳米SiO2复合促进微弧氧化层生长的主要原因。
Bibliography:Al2O3 coatings embedded with SiO2 nanoparticles were produced on 7A52 aluminum alloy by adding SiO2 nanoparticles into the electrolyte.The effect of n-SiO2 on the growth kinetics of the micro-arc oxidized coating under the two modes of constant voltage and constant current was investigated.The results show that nano-SiO2 increased the growth rate of micro-arc oxidized coating and the current efficiency.Nano-SiO2 is formed impurity energy level and narrowed band gap,so that impurity discharge is existed during the breakdown process and promoted the micro-arc oxidation process of electrical breakdown,resulting in the improvement of the growth efficiency of micro-arc oxidized coating.
aluminum alloy; micro-arc oxidation; nanocompostie; dynamics study; doping
11-3159/V
MA Shi-ning,SUO Xiang-bo,QIU Ji,ZHU Hai-yan（1.Department of Remanufacturing,Academy of Armored Forces Engineering,Beijing 100072,China;2.Jiuquan Satellite launching Center,Jiuquan 732750,Gansu China）
ISSN:1005-5053
DOI:10.3969/j.issn.1005-5053.2012.1.014