Benchmarking monolayer MoS2 and WS2 field-effect transistors

• Published in: Nature communications Vol. 12; no. 1; pp. 693 - 12
• Main Authors: Sebastian, Amritanand, Pendurthi, Rahul, Choudhury, Tanushree H., Redwing, Joan M., Das, Saptarshi
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 29.01.2021; Nature Publishing Group; Nature Portfolio
• Subjects: 140/133; 140/146; 639/301/1005/1007; 639/301/357/1018; Benchmarks; Carrier mobility; Chalcogenides; Field effect transistors; Humanities and Social Sciences; Integrated circuits; Metalorganic chemical vapor deposition; Molybdenum disulfide; Monolayers; multidisciplinary; Organic chemicals; Organic chemistry; Performance evaluation; Science; Science (multidisciplinary); Semiconductor devices; Substrates; Thin bodies; Transistors; Transition metal compounds; Tungsten disulfide
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-020-20732-w

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS 2 and WS 2 films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS 2 FETs and 160 WS 2 FETs with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1 × 1 cm 2 chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33 cm 2  V −1  s −1 in WS 2 FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits. Here, the authors perform a benchmark study of field-effect transistors (FETs) based on 2D transition metal dichalcogenides, i.e., 230 MoS 2 and 160 WS 2 FETs, and track device-to-device variations to gauge the technological viability in future integrated circuits.