Tin-stabilized (1 × 2) and (1 × 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

• Published in: Surface science Vol. 605; no. 9; pp. 883 - 888
• Main Authors: Lång, J.J.K., Laukkanen, P., Punkkinen, M.P.J., Ahola-Tuomi, M., Kuzmin, M., Tuominen, V., Dahl, J., Tuominen, M., Perälä, R.E., Schulte, K., Adell, J., Sadowski, J., Kanski, J., Guina, M., Pessa, M., Kokko, K., Johansson, B., Vitos, L., Väyrynen, I.J.
• Format: Journal Article
• Language: English; Russian
• Published: Kidlington Elsevier B.V 2011; Elsevier
• Subjects: Ab initio calculations; augmented-wave; basis-set; Dimers; dynamics; Engineering physics; Fysik; Gallium-arsenide (GaAs); growth; Indium-arsenide (InAs); Low energy electron diffraction; Material physics with surface physics; Materialfysik med ytfysik; Mathematical analysis; metals; method; molecular-beam epitaxy; NATURAL SCIENCES; NATURVETENSKAP; Photoelectron spectroscopy; Physical Sciences; Physics; radiation photoelectron spectroscopy; Reconstruction; Scanning tunneling microscopy; Single crystal surfaces; sn-doped gaas; Spectroscopy; state; surface; Surface reconstruction; Synchrotron; Synchrotron radiation photoelectron spectroscopy; TECHNOLOGY; TEKNIKVETENSKAP; Teknisk fysik; Tin; total-energy calculations; Surface reconstruction; Indium-arsenide (InAs); Scanning-tunneling microscopy; Single crystal surfaces; Ab initio calculations; Synchrotron radiation photoelectron spectroscopy; Gallium-arsenide (GaAs)
• ISSN: 0039-6028; 1879-2758; 1879-2758
• DOI: 10.1016/j.susc.2011.01.034

Tin (Sn) induced (1 × 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn–III dimers. Furthermore, a new Sn-induced (1 × 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 × 2) reconstruction, and it is shown that the (1 × 4) reconstruction is stabilized as the adatom size increases. ► We elucidate the atomic structure of Sn-stabilized GaAs/InAs(100)(1×2)/(1×4) surfaces. ► SnGa- and SnAs-dimer models were found to be energetically favorable for GaAs(100). ► For InAs(100), only SnIn-model is energetically favorable at 0 K. ► STM- and photoemission measurements support the presence of SnIII-structures.