Hole-Transport Management Enables 23%-Efficient and Stable Inverted Perovskite Solar Cells with 84% Fill Factor

• Published in: Nano-micro letters Vol. 15; no. 1; p. 117
• Main Authors: Liu, Liming, Ma, Yajie, Wang, Yousheng, Ma, Qiaoyan, Wang, Zixuan, Yang, Zigan, Wan, Meixiu, Mahmoudi, Tahmineh, Hahn, Yoon-Bong, Mai, Yaohua
• Format: Journal Article
• Language: English
• Published: Singapore Springer Nature Singapore 01.12.2023; Springer Nature B.V; SpringerOpen
• Subjects: Bonding strength; Chemical bonds; Configurations; Defects; Efficiency; Energy conversion efficiency; Energy gap; Engineering; High performance and stability; Hole-transport management; Illumination; Interface-induced defect passivation; Interfaces; Inverted NiO x -based perovskite solar cells; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Open circuit voltage; Perovskites; Photovoltaic cells; Radiative recombination; Solar cells; Stability; Three dimensional composites; Transportation management; High performance and stability; Interface-induced defect passivation; Inverted NiO; based perovskite solar cells; Hole-transport management; Inverted NiOx-based perovskite solar cells
• ISSN: 2311-6706; 2150-5551
• DOI: 10.1007/s40820-023-01088-4

Highlights A graded inverted solar cell configuration is developed by hole-transport management aiming to suppress interface defects-induced non-radiative recombination for efficient hole transport. NiO x -based inverted PSCs present a power-conversion-efficiency over 23% with a high fill factor of 0.84 and open-circuit voltage of 1.162 volts, one of the best performances reported so far for 1.56-electron volt bandgap formamidinium-based triple-halide perovskites. Devices show high operational stability over 1,200 h during T 90 lifetime measurement under 1-sun illumination in ambient-air conditions. NiO x -based inverted perovskite solar cells (PSCs) have presented great potential toward low-cost, highly efficient and stable next-generation photovoltaics. However, the presence of energy-level mismatch and contact-interface defects between hole-selective contacts (HSCs) and perovskite-active layer (PAL) still limits device efficiency improvement. Here, we report a graded configuration based on both interface-cascaded structures and p-type molecule-doped composites with two-/three-dimensional formamidinium-based triple-halide perovskites. We find that the interface defects-induced non-radiative recombination presented at HSCs/PAL interfaces is remarkably suppressed because of efficient hole extraction and transport. Moreover, a strong chemical interaction, halogen bonding and coordination bonding are found in the molecule-doped perovskite composites, which significantly suppress the formation of halide vacancy and parasitic metallic lead. As a result, NiO x -based inverted PSCs present a power-conversion-efficiency over 23% with a high fill factor of 0.84 and open-circuit voltage of 1.162 V, which are comparable to the best reported around 1.56-electron volt bandgap perovskites. Furthermore, devices with encapsulation present high operational stability over 1,200 h during T 90 lifetime measurement (the time as a function of PCE decreases to 90% of its initial value) under 1-sun illumination in ambient-air conditions.