Precisely Control Relationship between Sulfur Vacancy and H Absorption for Boosting Hydrogen Evolution Reaction
Highlights The Ar plasma etching strategy was introduced to homogeneously distributed S-vacancies (VS) into the NiS 2 nanosheets (NiS 2 -VS). Build the relationship between sulfur vacancy and H absorption and find that NiS 2 -VS 5.9% performs outstanding hydrogen evolution reaction performance and r...
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Published in | Nano-micro letters Vol. 16; no. 1; p. 63 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Singapore
Springer Nature Singapore
01.12.2024
Springer Nature B.V SpringerOpen |
Subjects | |
Online Access | Get full text |
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Summary: | Highlights
The Ar plasma etching strategy was introduced to homogeneously distributed S-vacancies (VS) into the NiS
2
nanosheets (NiS
2
-VS).
Build the relationship between sulfur vacancy and H absorption and find that NiS
2
-VS 5.9% performs outstanding hydrogen evolution reaction performance and remarkable stability.
Effective and robust catalyst is the core of water splitting to produce hydrogen. Here, we report an anionic etching method to tailor the sulfur vacancy (V
S
) of NiS
2
to further enhance the electrocatalytic performance for hydrogen evolution reaction (HER). With the V
S
concentration change from 2.4% to 8.5%, the H* adsorption strength on S sites changed and NiS
2
-V
S
5.9% shows the most optimized H* adsorption for HER with an ultralow onset potential (68 mV) and has long-term stability for 100 h in 1 M KOH media. In situ attenuated-total-reflection Fourier transform infrared spectroscopy (ATR-FTIRS) measurements are usually used to monitor the adsorption of intermediates. The S- H* peak of the NiS
2
-V
S
5.9% appears at a very low voltage, which is favorable for the HER in alkaline media. Density functional theory calculations also demonstrate the NiS
2
-V
S
5.9% has the optimal |ΔG
H*
| of 0.17 eV. This work offers a simple and promising pathway to enhance catalytic activity via precise vacancies strategy. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2311-6706 2150-5551 |
DOI: | 10.1007/s40820-023-01291-3 |