退火对ZnO/Cu/ZnO透明导电薄膜性能的影响

室温下利用磁控溅射制备了ZnO/Cu/ZnO透明导电薄膜,采用X射线衍射（XRD）、原子力显微镜（AFM）、扫描电子显微镜（SEM）、霍尔效应测量仪和紫外-可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系。结果表明：退火前后薄膜均具有ZnO（002）择优取向,随着退火温度的升高,薄膜的晶化程度、晶粒粒径及粗糙度增加,薄膜电阻率先降低后升高,光学透过率和禁带宽度先升高后降低。150℃下真空退火的ZnO/Cu/ZnO薄膜的性能最佳,最高可见光透光率为90.5%,电阻率为1.28×10^-4Ω·cm,载流子浓度为4.10×10^21cm^-3。...

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Published in材料工程 Vol. 43; no. 1; pp. 44 - 48
Main Author 李文英 钟建 张柯 汪元元 尹桂林 何丹农
Format Journal Article
LanguageChinese
Published 上海交通大学材料科学与工程学院,上海,200240%纳米技术及应用国家工程研究中心,上海,200241%上海交通大学材料科学与工程学院,上海200240 2015
纳米技术及应用国家工程研究中心,上海200241
Subjects
Cu
ZnO
退火
透明导电薄膜
transparent conductive film
Cu
退火
ZnO
annealing
透明导电薄膜
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Summary:室温下利用磁控溅射制备了ZnO/Cu/ZnO透明导电薄膜,采用X射线衍射（XRD）、原子力显微镜（AFM）、扫描电子显微镜（SEM）、霍尔效应测量仪和紫外-可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系。结果表明：退火前后薄膜均具有ZnO（002）择优取向,随着退火温度的升高,薄膜的晶化程度、晶粒粒径及粗糙度增加,薄膜电阻率先降低后升高,光学透过率和禁带宽度先升高后降低。150℃下真空退火的ZnO/Cu/ZnO薄膜的性能最佳,最高可见光透光率为90.5%,电阻率为1.28×10^-4Ω·cm,载流子浓度为4.10×10^21cm^-3。
Bibliography:11-1800/TB
ZnO/Cu/ZnO transparent conductive thin film was prepared by magnetic sputtering deposi- tion at room temperature. The relationships between post-annealing and the structure, morphology, electrical and optical properties of the multilayer film were investigated by X-ray diffraction （XRD）, atomic force microscope （AFM）, scanning electron microscope （SEM）, Hall effect measurement sys- tem and UV-Vis spectrophotometer. The results indicate that ZnO films have （002） preferential orientation before and after annealing. With the increase of annealing temperature, the crystallization, grain size and surface roughness increase. The resistivity decreases at first and then increases, while the optical transmittance and band gap energy increase at first and then decrease. ZnO/Cu/ZnO film annealed at 150℃ has the best performance with the highest transmittance of 90. 5% in the visible range, a resistivity of 1.28×10^-4Ω· cm and a carrier concentration of 4.10×10^21cm^-3.
LI Wen-ying, ZHONG WANG Yuan-yuan ,YIN Gui
ISSN:1001-4381
1001-4381
DOI:10.11868/j.issn.1001-4381.2015.01.008