Mechanisms Underlying Memory Consolidation by Adult-Born Neurons During Sleep

The mammalian hippocampus generates new neurons that incorporate into existing neuronal networks throughout the lifespan, which bestows a unique form of cellular plasticity to the memory system. Recently, we found that hippocampal adult-born neurons (ABNs) that were active during learning reactivate...

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Bibliographic Details
Published inFrontiers in cellular neuroscience Vol. 14; p. 594401
Main Authors Vergara, Pablo, Sakaguchi, Masanori
Format Journal Article
LanguageEnglish
Published Switzerland Frontiers Media S.A 26.11.2020
Subjects
adult-neurogenesis
Cellular Neuroscience
hippocampus
memory consolidation
REM sleep
synaptic plasticity
theta oscillation
theta oscillation
hippocampus
memory consolidation
optogenetics
adult-neurogenesis
synaptic plasticity
calcium-imaging
REM sleep
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Summary:The mammalian hippocampus generates new neurons that incorporate into existing neuronal networks throughout the lifespan, which bestows a unique form of cellular plasticity to the memory system. Recently, we found that hippocampal adult-born neurons (ABNs) that were active during learning reactivate during subsequent rapid eye movement (REM) sleep and provided causal evidence that ABN activity during REM sleep is necessary for memory consolidation. Here, we describe the potential underlying mechanisms by highlighting distinct characteristics of ABNs including decoupled firing from local oscillations and ability to undergo profound synaptic remodeling in response to experience. We further discuss whether ABNs constitute the conventional definition of engram cells by focusing on their active and passive roles in the memory system. This synthesis of evidence helps advance our thinking on the unique mechanisms by which ABNs contribute to memory consolidation.
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Edited by: Vicente Herranz-Pérez, University of Valencia, Spain
This article was submitted to Cellular Neurophysiology, a section of the journal Frontiers in Cellular Neuroscience
Reviewed by: Dheeraj S. Roy, Massachusetts Institute of Technology, United States; Simone Astori, École Polytechnique Fédérale de Lausanne, Switzerland
ISSN:1662-5102
1662-5102
DOI:10.3389/fncel.2020.594401