铅镉重金属离子在铋膜电极上的相互影响

采用原位镀铋电极的方式,以玻碳电极为工作电极,通过改变Cd2＋和Pb2＋的比例,考察不同Pb2＋和Cd2＋浓度条件下,两者同时存在时的相互影响。实验发现,Cd2＋和Pb2＋同时存在时,存在相互的影响,特别是对于Cd2＋的检测,由于Pb2＋较正的析出电位,对于Cd2＋的析出有一定的辅助作用。考察了Cd2＋和Pb2＋单独存在时的分析性能, Pb2＋沉积时间为60 s时,在1～80μg/L范围内呈线性关系,检出限为0.5μg/L；Cd2＋的沉积时间为120 s,在1～25μg/L和30～200μg/L范围内有良好的线性关系,检出限为1.0μg/L。考察了铋膜电极在不同实际水样中对Pb2＋和Cd2＋的...

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Bibliographic Details
Published in分析化学 Vol. 42; no. 10; pp. 1539 - 1543
Main Author 韩彦超 卫婷 李敬 贾小芳 李冬月 张晓伟 汪尔康
Format Journal Article
LanguageChinese
Published 中国科学院长春应用化学研究所电分析化学国家重点实验室,长春,130022%长春工程学院,长春,130061%中国科学院长春应用化学研究所电分析化学国家重点实验室，长春130022 2014
中国科学院研究生院，北京100039
Subjects
溶出伏安
相互干扰
铅
铋膜电极
镉
Cadmium
Stripping voltammetry
Mutual interference
铅
铋膜电极
Lead
镉
Bismuth film electrode
溶出伏安
相互干扰
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ISSN0253-3820
DOI10.11895/j.issn.0253-3820.140420

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Summary:采用原位镀铋电极的方式,以玻碳电极为工作电极,通过改变Cd2＋和Pb2＋的比例,考察不同Pb2＋和Cd2＋浓度条件下,两者同时存在时的相互影响。实验发现,Cd2＋和Pb2＋同时存在时,存在相互的影响,特别是对于Cd2＋的检测,由于Pb2＋较正的析出电位,对于Cd2＋的析出有一定的辅助作用。考察了Cd2＋和Pb2＋单独存在时的分析性能, Pb2＋沉积时间为60 s时,在1～80μg/L范围内呈线性关系,检出限为0.5μg/L；Cd2＋的沉积时间为120 s,在1～25μg/L和30～200μg/L范围内有良好的线性关系,检出限为1.0μg/L。考察了铋膜电极在不同实际水样中对Pb2＋和Cd2＋的分析,获得了较好的一致性。
Bibliography:The mutual influence of lead and cadmium ions on “in-situ” bismuth film coated glassy carbon electrode was demonstrated using different concentration target ions by changing ratio between Pb2＋ and Cd2＋. It is found that the presence of coexisting ions can have an influence on the detection of target ions. Especially for the detection of Cd2＋, the existence of Pb2＋ can be beneficial for the deposition of Cd due to the more positive deposition potentials. And the analytical performances of Cd2＋and Pb2＋ were obtained. The detection limit is 0. 5 μg/L towards Pb2＋ with a linear range from 1-80 μg/L using 60 s deposition time. The resulting calibration plots of Cd2＋ are linear over the range from 1-25 and 30-200 μg/L with the detection limit of 1 μg/L using 120 s deposition time. The bismuth film was finally employed to determine the Pb2＋and Cd2＋in real sample with good satisfied results.
Lead;Cadmium;Bismuth film electrode;Stripping voltammetry;Mutual interference
22-1125/O6
HAN Yan-Chao, WEI Ting, LI Jing, JIA Xiao
ISSN:0253-3820
DOI:10.11895/j.issn.0253-3820.140420