Improved 2 µm broadband luminescence in Tm 3+ /Ho 3+ doping tellurite glass

• Published in: Optics express Vol. 31; no. 8; p. 12819
• Main Authors: Zhu, Liqiao, Zhao, Dongyi, Li, Chengyan, Ding, Jiale, Li, Jun, Zhou, Yaxun
• Format: Journal Article
• Language: English
• Published: United States 10.04.2023
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/OE.484566

Tm /Ho doping tellurite glasses (TeO -ZnO-La O ) were prepared by applying melt-quenching technique, and the ∼2.0 µm band luminescence characteristics were examined. A broadband and relatively flat luminescence at 1600 to 2200 nm was observed in the tellurite glass co-doped by 1.0 mol% Tm O and 0.085 mol% Ho O under the excitation of 808 nm laser diode (LD), which is the result of spectral overlapping of 1.83 µm band of Tm ions and 2.0 µm band of Ho ions. Further, about 103% enhancement was acquired after the introduction of 0.1 mol% CeO and 7.5 mol% WO at the same time, which is primarily caused by the cross-relaxation between Tm and Ce ions together with the enhanced energy transfer from the Tm : F level to Ho : I level due to the increase in phonon energy. Spectral characteristics associated with the radiative transition of Ho and Tm ions on the basis of Judd-Ofelt theory, and the fluorescence decay behaviors after the addition of Ce ions and WO component were analyzed to understand the broadband and luminescence enhancement. The findings in this work indicate that tellurite glass with optimal Tm -Ho -Ce tri-doping combination and appropriate amount of WO is a prospective candidate for broadband optoelectronic devices operated in the infrared bands.