NMOS Device Optimization for the Design of a W-Band Double-Balanced Resistive Mixer

This letter describes the implementation of NMOS devices in a passive ring mixer whose operating frequency reaches device's cut-off frequency. Conversion gain, linearity and required LO power are discussed regarding device geometry using simple analytic formulas and electrical simulations. The...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 24; no. 9; pp. 637 - 639
Main Authors Viallon, Christophe, Meneghin, Gregory, Parra, Thierry
Format Journal Article
LanguageEnglish
Published IEEE 01.09.2014
Institute of Electrical and Electronics Engineers
Subjects
Conversion
Devices
Electric power generation
Electronics
Engineering Sciences
Gain
Linearity
Logic gates
Low-noise
millimeter-wave
Mixers
MOS devices
Noise
Noise levels
passive mixer
Radio frequency
resistive mixer
Silicon germanides
W-band
zero-IF receiver
low-noise
passive mixer
millimeter-wave
zero-IF receiver
W-band
resistive mixer
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Summary:This letter describes the implementation of NMOS devices in a passive ring mixer whose operating frequency reaches device's cut-off frequency. Conversion gain, linearity and required LO power are discussed regarding device geometry using simple analytic formulas and electrical simulations. The mixer is then embedded in a down-converter including RF, LO and IF buffers and integrated in a 130 nm BiCMOS SiGe technology. Measurements indicate a conversion gain of 14.5 dB at 76.8 GHz, an output-referred 1 dB compression point of -10 dBm and a DSB noise figure of 6.3 dB confirming the interest of double-balanced passive mixers at millimeter-wave frequencies.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2014.2332100