Development of Transmission Grating for EUV Interference Lithography of 1X nm HP

• Published in: Journal of Photopolymer Science and Technology Vol. 28; no. 4; pp. 525 - 529
• Main Authors: Fukui, Tsubasa, Tanino, Hirohito, Fukuda, Yuki, Kuki, Masaki, Watanabe, Takeo, Kinoshita, Hiroo, Harada, Tetsuo
• Format: Journal Article
• Language: English
• Published: Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.01.2015; Japan Science and Technology Agency
• Subjects: Devices; EUV lithography; Interference; interference lithography; Light water reactors; Lithography; Patterning; Resists; Semiconductors; transmission diffraction grating; Ultraviolet
• ISSN: 0914-9244; 1349-6336
• DOI: 10.2494/photopolymer.28.525

The advanced feature size patterning process of semiconductor conductor devices was being charged with the important role with development of an information-technology oriented society. Extreme ultraviolet lithography (EUVL) is expected as a leading candidate of the next generation lithography for semiconductor electronic devices. The development of EUV resist which has high resolution, high sensitivity, low LWR, and low out gassing is a second critical issue of the EUVL. Development of the two-beam interference exposure tool using the EUV light has been upgraded for the critical dimension of 10-nm-order in EUV resist patterining process. This tool was installed at the 10.8-nm-long undulator beamline BL09B of NewSUBARU synchrotron radiation facility. Using this EUV interference lithographic method, 15 nm hp resist pattern had been replicated on a silicon wafer. The transmission grating fabrication is the most significant key technology in the EUV interference lithography. The advanced fabrication process is applied for the transmission-grating fabrication for the EUV resist patterning beyond the feature size of 15 nm, such as 12.5 and 10 nm.