Rashba effect within the space-charge layer of a semiconductor

The observed heavy-hole, light-hole and split-off band edges of a semiconductor are the well known consequence of two physical processes: atomic spin-orbital interaction and solid-state band-band anticrossing. In this work, we examined the four band-edge-like bands in great detail within the Ge spac...

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Published inNew journal of physics Vol. 16; no. 4; pp. 45003 - 12
Main Authors Lin, Chung-Huang, Chang, Tay-Rong, Liu, Ro-Ya, Cheng, Cheng-Maw, Tsuei, Ku-Ding, Jeng, H -T, Mou, Chung-Yu, Matsuda, Iwao, Tang, S -J
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 04.04.2014
Subjects
Bands
Germanium
Lead (metal)
Physics
Pictures
Rashba effect
semiconductor band edges
Semiconductors
space-charge layer
Splitting
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Summary:The observed heavy-hole, light-hole and split-off band edges of a semiconductor are the well known consequence of two physical processes: atomic spin-orbital interaction and solid-state band-band anticrossing. In this work, we examined the four band-edge-like bands in great detail within the Ge space-charge layer with either Pb Ge(111)- R30° or a 2 ML Pb film on Ge(111). Our results reveal that the conventional picture of band edges for a semiconductor is actually crude. In addition, momentum-dependent Rashba splitting effect can be included to explain the observed non-split-off band, indicating the Rashba effect as an intrinsic property near a semiconductor surface.
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ISSN:1367-2630
1367-2630
DOI:10.1088/1367-2630/16/4/045003