Improved photoluminescence stability and defect passivation in SbBr 3 post-treated CsPbBr 3 quantum dots under ambient conditions

• Published in: Luminescence (Chichester, England) Vol. 39; no. 3; p. e4706
• Main Authors: S, Sruthi, Suresh, Swapnika, Subramaniam, Mohan Raj, Batabyal, Sudip K
• Format: Journal Article
• Language: English
• Published: England 01.03.2024
• Subjects: Antimony; Bromides; Calcium Compounds; Cesium; Oxides; Quantum Dots; Titanium; photoluminescence; ligand-assisted re-precipitation; caesium lead bromide quantum dots; photoluminescence quantum yield; antimony tribromide post-treatment
• ISSN: 1522-7235; 1522-7243
• DOI: 10.1002/bio.4706

Inorganic cesium lead halide perovskites have evoked wide popularity because of their excellent optoelectronic properties, high photoluminescence (PL) quantum yield (PLQY), and narrowband emission. Here, cesium lead bromide (CsPbBr ) quantum dots (QDs) were synthesized via the ligand-assisted re-precipitation method. Post-synthesis treatment of CsPbBr QDs using antimony tribromide improved the PL stability and optoelectronic properties of the QDs. In addition, the PLQY of the post-treated sample was enhanced to 91% via post-treatment, and the luminescence observed was maintained for 8 days. The post-synthesis treatment ensured defect passivation and improved the stability of CsPbBr perovskite QDs. High-resolution transmission electron microscopy revealed the presence of more ordered, uniform-sized CsPbBr QDs after post-synthesis treatment, and the uniformity of the sample improved as the day passed. The formation of a mixed crystal phase was observed from X-ray diffraction in both as-synthesized, as well as post-treated QDs samples with the possibility of a polycrystalline nature in the post-treated CsPbBr QDs as per the selected area electron diffraction pattern. The X-ray photoelectron spectroscopy spectra confirmed the presence of antimony and the possibility of defect passivation in the post-treated samples. These QDs can act as potential candidates in various optoelectronic applications such as photodetectors and light-emitting diodes due to their high PLQY and longer lifetime.