Carrier multiplication in van der Waals layered transition metal dichalcogenides

Carrier multiplication (CM) is a process in which high-energy free carriers relax by generation of additional electron-hole pairs rather than by heat dissipation. CM is promising disruptive improvements in photovoltaic energy conversion and light detection technologies. Current state-of-the-art nano...

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Published inNature communications Vol. 10; no. 1; p. 5488
Main Authors Kim, Ji-Hee, Bergren, Matthew R, Park, Jin Cheol, Adhikari, Subash, Lorke, Michael, Frauenheim, Thomas, Choe, Duk-Hyun, Kim, Beom, Choi, Hyunyong, Gregorkiewicz, Tom, Lee, Young Hee
Format Journal Article
LanguageEnglish
Published England Nature Publishing Group 02.12.2019
Nature Publishing Group UK
Nature Portfolio
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Summary:Carrier multiplication (CM) is a process in which high-energy free carriers relax by generation of additional electron-hole pairs rather than by heat dissipation. CM is promising disruptive improvements in photovoltaic energy conversion and light detection technologies. Current state-of-the-art nanomaterials including quantum dots and carbon nanotubes have demonstrated CM, but are not satisfactory owing to high-energy-loss and inherent difficulties with carrier extraction. Here, we report CM in van der Waals (vdW) MoTe and WSe films, and find characteristics, commencing close to the energy conservation limit and reaching up to 99% CM conversion efficiency with the standard model. This is demonstrated by ultrafast optical spectroscopy with independent approaches, photo-induced absorption, photo-induced bleach, and carrier population dynamics. Combined with a high lateral conductivity and an optimal bandgap below 1 eV, these superior CM characteristics identify vdW materials as an attractive candidate material for highly efficient and mechanically flexible solar cells in the future.
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ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-019-13325-9