Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC

• Published in: Journal of physics. D, Applied physics Vol. 36; no. 10A; pp. A30 - A36
• Main Authors: Dudley, Michael, Huang, XianRong, Vetter, William M
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Bristol IOP Publishing 21.05.2003; Institute of Physics
• Subjects: Condensed matter: structure, mechanical and thermal properties; CRYSTAL DEFECTS; Defects and impurities in crystals; microstructure; Exact sciences and technology; Experimental determination of defects by diffraction and scattering; MATERIALS SCIENCE; NATIONAL SYNCHROTRON LIGHT SOURCE; Physics; RESOLUTION; SILICON CARBIDES; Structure of solids and liquids; crystallography; TOPOGRAPHY; X-RAY DIFFRACTION; Thin films; Crystal defects; Inorganic compounds; Investigation method; Polytypism; Dislocation core; Silicon carbides; Screw dislocations; Experimental study; Heterostructures; Synchrotron radiation; X-ray topography
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/36/10A/307

A short review is presented of the various synchrotron white beam X-ray topography (SWBXT) imaging techniques developed for characterization of silicon carbide (SiC) crystals and thin films. These techniques, including back-reflection topography, reticulography, transmission topography, and a set of section topography techniques, are demonstrated to be particularly powerful for imaging hollow-core screw dislocations (micropipes) and closed-core threading screw dislocations, as well as other defects, in SiC. The geometrical diffraction mechanism commonly underlying these imaging processes is emphasized for understanding the nature and origins of these defects. Also introduced is the application of SWBXT combined with high-resolution X-ray diffraction techniques to complete characterization of 3C/4H or 3C/6H SiC heterostructures, including polytype identification, 3C variant mapping, and accurate lattice mismatch measurements.