Low-temperature crystallization of oriented ZnO film using seed layers prepared by sol–gel method
Transparent zinc oxide (ZnO) films were coated on seed layers prepared by the sol–gel method by chemical solution deposition method. Firstly, seed layers were prepared from zinc acetate and monoethanolamine, 2-methoxyethanol by the sol–gel method on a silicon substrate or a slide glass. Next, the su...
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Published in | Journal of materials science Vol. 46; no. 10; pp. 3537 - 3543 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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Boston
Springer US
01.05.2011
Springer Springer Nature B.V |
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Online Access | Get full text |
ISSN | 0022-2461 1573-4803 |
DOI | 10.1007/s10853-011-5263-8 |
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Abstract | Transparent zinc oxide (ZnO) films were coated on seed layers prepared by the sol–gel method by chemical solution deposition method. Firstly, seed layers were prepared from zinc acetate and monoethanolamine, 2-methoxyethanol by the sol–gel method on a silicon substrate or a slide glass. Next, the substrate coated with a seed layer was immersed in zinc nitride solution with hexamethylenetetramine, and ZnO films were obtained. The transmittance of the ZnO films depended on the morphology and crystallinity of the seed layers. When the seed layer were dried on a hot plate, the seed layer had flat surface and transparent ZnO film could be obtained on the seed layers dried at temperatures above 200 °C. When the seed layer was prepared from zinc acetate dihydrate dried in a petri dish, the seed layer were smooth without cracks and the transparent ZnO films were obtained at temperature below 100 °C. |
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AbstractList | Transparent zinc oxide (ZnO) films were coated on seed layers prepared by the sol-gel method by chemical solution deposition method. Firstly, seed layers were prepared from zinc acetate and monoethanolamine, 2-methoxyethanol by the sol-gel method on a silicon substrate or a slide glass. Next, the substrate coated with a seed layer was immersed in zinc nitride solution with hexamethylenetetramine, and ZnO films were obtained. The transmittance of the ZnO films depended on the morphology and crystallinity of the seed layers. When the seed layer were dried on a hot plate, the seed layer had flat surface and transparent ZnO film could be obtained on the seed layers dried at temperatures above 200°C. When the seed layer was prepared from zinc acetate dihydrate dried in a petri dish, the seed layer were smooth without cracks and the transparent ZnO films were obtained at temperature below 100°C. Transparent zinc oxide (ZnO) films were coated on seed layers prepared by the sol--gel method by chemical solution deposition method. Firstly, seed layers were prepared from zinc acetate and monoethanolamine, 2-methoxyethanol by the sol--gel method on a silicon substrate or a slide glass. Next, the substrate coated with a seed layer was immersed in zinc nitride solution with hexamethylenetetramine, and ZnO films were obtained. The transmittance of the ZnO films depended on the morphology and crystallinity of the seed layers. When the seed layer were dried on a hot plate, the seed layer had flat surface and transparent ZnO film could be obtained on the seed layers dried at temperatures above 200 degree C. When the seed layer was prepared from zinc acetate dihydrate dried in a petri dish, the seed layer were smooth without cracks and the transparent ZnO films were obtained at temperature below 100 degree C. Transparent zinc oxide (ZnO) films were coated on seed layers prepared by the sol–gel method by chemical solution deposition method. Firstly, seed layers were prepared from zinc acetate and monoethanolamine, 2-methoxyethanol by the sol–gel method on a silicon substrate or a slide glass. Next, the substrate coated with a seed layer was immersed in zinc nitride solution with hexamethylenetetramine, and ZnO films were obtained. The transmittance of the ZnO films depended on the morphology and crystallinity of the seed layers. When the seed layer were dried on a hot plate, the seed layer had flat surface and transparent ZnO film could be obtained on the seed layers dried at temperatures above 200 °C. When the seed layer was prepared from zinc acetate dihydrate dried in a petri dish, the seed layer were smooth without cracks and the transparent ZnO films were obtained at temperature below 100 °C. Transparent zinc oxide (ZnO) films were coated on seed layers prepared by the sol–gel method by chemical solution deposition method. Firstly, seed layers were prepared from zinc acetate and monoethanolamine, 2-methoxyethanol by the sol–gel method on a silicon substrate or a slide glass. Next, the substrate coated with a seed layer was immersed in zinc nitride solution with hexamethylenetetramine, and ZnO films were obtained. The transmittance of the ZnO films depended on the morphology and crystallinity of the seed layers. When the seed layer were dried on a hot plate, the seed layer had flat surface and transparent ZnO film could be obtained on the seed layers dried at temperatures above 200 °C. When the seed layer was prepared from zinc acetate dihydrate dried in a petri dish, the seed layer were smooth without cracks and the transparent ZnO films were obtained at temperature below 100 °C. |
Audience | Academic |
Author | Izumi, Reiko Sakurai, Hideaki Segawa, Hiroyo Hayashi, Toshiharu Shibata, Shuichi Yano, Tetsuji |
Author_xml | – sequence: 1 givenname: Hiroyo surname: Segawa fullname: Segawa, Hiroyo email: Segawa.Hiroyo@nims.go.jp organization: Exploratory Nanomaterials Research Laboratory, National Institute for Materials Science – sequence: 2 givenname: Hideaki surname: Sakurai fullname: Sakurai, Hideaki organization: Central Research Institute, Naka Research Center, Mitsubishi Materials Corporation – sequence: 3 givenname: Reiko surname: Izumi fullname: Izumi, Reiko organization: Central Research Institute, Naka Research Center, Mitsubishi Materials Corporation – sequence: 4 givenname: Toshiharu surname: Hayashi fullname: Hayashi, Toshiharu organization: Central Research Institute, Naka Research Center, Mitsubishi Materials Corporation – sequence: 5 givenname: Tetsuji surname: Yano fullname: Yano, Tetsuji organization: Department of Chemistry and Materials Science, Graduate School of Science and Engineering, Tokyo Institute of Technology – sequence: 6 givenname: Shuichi surname: Shibata fullname: Shibata, Shuichi organization: Department of Chemistry and Materials Science, Graduate School of Science and Engineering, Tokyo Institute of Technology |
BookMark | eNp9kc1q3DAQx0VJoZttH6A3Qw-lB6cj2bLkYwj9CCwE-nHpRWjlsasgW64kk25PeYe8YZ-k2m4hbGiLDkLi95sZ5n9KTiY_ISHPKZxRAPE6UpC8KoHSkrOmKuUjsqJcVGUtoTohKwDGSlY39Ak5jfEaALhgdEXMxt-UCccZg05LwMKEXUzaOftDJ-unwveFDxanhF3xZboqeuvGYol2GoqI-c_pHYZYzAFnHfJ7uyuidz9v7wZ0xYjpq--ekse9dhGf_bnX5PPbN58u3pebq3eXF-eb0nDeplKKvjPcVB30Tdc1spZii1vQsuN620LDQUpA3fWtQQaiYW3NgIoWgLKGiapak5eHunPw3xaMSY02GnROT-iXqFoQbVXTjK7JiwfktV_ClIdTjPGWS8Epu6cG7VDZqfcpaLOvqc5rSmtBOW0zdfYXKp8OR2tySnljeCy8OhIyk_B7GvQSo7r8-OGYpQfWBB9jwF7NwY467BQFtQ9eHYJXOXi1D17J7IgHjrHpd5h5MOv-a7KDGXOXacBwv5Z_S78AB2zCIA |
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Cites_doi | 10.1063/1.124897 10.1063/1.2113418 10.1021/jp038014p 10.1016/j.cplett.2004.11.091 10.1002/adma.200390108 10.1016/S0013-4686(00)00405-9 10.1016/j.vacuum.2004.08.003 10.1063/1.336310 10.1149/1.1838737 10.2109/jcersj.104.296 10.1021/jp010026s 10.1016/S0927-0248(00)00065-9 10.1149/1.2096463 10.1007/BF02403024 10.1016/j.tsf.2005.06.013 10.1016/j.tsf.2005.07.276 10.1246/cl.2004.770 10.1016/S0040-6090(97)00231-9 10.1016/S0921-5107(01)00584-0 |
ContentType | Journal Article |
Copyright | Springer Science+Business Media, LLC 2011 COPYRIGHT 2011 Springer Journal of Materials Science is a copyright of Springer, (2011). All Rights Reserved. |
Copyright_xml | – notice: Springer Science+Business Media, LLC 2011 – notice: COPYRIGHT 2011 Springer – notice: Journal of Materials Science is a copyright of Springer, (2011). All Rights Reserved. |
DBID | AAYXX CITATION ISR 8FE 8FG ABJCF AFKRA BENPR BGLVJ CCPQU D1I DWQXO HCIFZ KB. L6V M7S PDBOC PHGZM PHGZT PKEHL PQEST PQGLB PQQKQ PQUKI PRINS PTHSS 7SR 8BQ 8FD JG9 |
DOI | 10.1007/s10853-011-5263-8 |
DatabaseName | CrossRef Gale In Context: Science ProQuest SciTech Collection ProQuest Technology Collection Materials Science & Engineering Collection ProQuest Central UK/Ireland ProQuest Central Technology Collection ProQuest One ProQuest Materials Science Collection ProQuest Central SciTech Premium Collection Materials Science Database (Proquest) ProQuest Engineering Collection Engineering Database Materials Science Collection ProQuest Central Premium ProQuest One Academic ProQuest One Academic Middle East (New) ProQuest One Academic Eastern Edition (DO NOT USE) ProQuest One Applied & Life Sciences ProQuest One Academic ProQuest One Academic UKI Edition ProQuest Central China Engineering Collection Engineered Materials Abstracts METADEX Technology Research Database Materials Research Database |
DatabaseTitle | CrossRef ProQuest Materials Science Collection Engineering Database Technology Collection ProQuest One Academic Middle East (New) ProQuest One Academic Eastern Edition Materials Science Collection SciTech Premium Collection ProQuest One Community College ProQuest Technology Collection ProQuest SciTech Collection ProQuest Central China ProQuest Central ProQuest One Applied & Life Sciences ProQuest Engineering Collection ProQuest One Academic UKI Edition ProQuest Central Korea Materials Science & Engineering Collection Materials Science Database ProQuest One Academic ProQuest Central (New) ProQuest One Academic (New) Engineering Collection Materials Research Database Engineered Materials Abstracts Technology Research Database METADEX |
DatabaseTitleList | Materials Research Database ProQuest Materials Science Collection |
Database_xml | – sequence: 1 dbid: 8FG name: ProQuest Technology Collection url: https://search.proquest.com/technologycollection1 sourceTypes: Aggregation Database |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1573-4803 |
EndPage | 3543 |
ExternalDocumentID | A411471519 10_1007_s10853_011_5263_8 |
GroupedDBID | -4Y -58 -5G -BR -EM -XW -Y2 -~C -~X .4S .86 .DC .VR 06C 06D 0R~ 0VY 199 1N0 1SB 2.D 203 29K 29L 2J2 2JN 2JY 2KG 2KM 2LR 2P1 2VQ 2~H 30V 4.4 406 408 409 40D 40E 53G 5GY 5QI 5VS 67Z 6NX 6TJ 78A 8FE 8FG 8UJ 95- 95. 95~ 96X AAAVM AABHQ AACDK AAHBH AAHNG AAIAL AAIKT AAJBT AAJKR AANZL AARHV AARTL AASML AATNV AATVU AAUYE AAWCG AAYIU AAYQN AAYTO AAYZH ABAKF ABBBX ABBXA ABDBF ABDEX ABDPE ABDZT ABECU ABFTD ABFTV ABHLI ABHQN ABJCF ABJNI ABJOX ABKCH ABKTR ABMNI ABMQK ABNWP ABQBU ABQSL ABSXP ABTAH ABTEG ABTHY ABTKH ABTMW ABULA ABWNU ABXPI ACAOD ACBXY ACDTI ACGFO ACGFS ACHSB ACHXU ACIWK ACKNC ACMDZ ACMLO ACOKC ACOMO ACPIV ACREN ACUHS ACZOJ ADHHG ADHIR ADIMF ADINQ ADKNI ADKPE ADMLS ADRFC ADTPH ADURQ ADYFF ADYOE ADZKW AEBTG AEFIE AEFQL AEGAL AEGNC AEGXH AEJHL AEJRE AEKMD AEMSY AENEX AEOHA AEPYU AESKC AETLH AEVLU AEXYK AFBBN AFEXP AFGCZ AFKRA AFLOW AFQWF AFWTZ AFYQB AFZKB AGAYW AGDGC AGGDS AGJBK AGMZJ AGQEE AGQMX AGRTI AGWIL AGWZB AGYKE AHAVH AHBYD AHKAY AHSBF AHYZX AI. AIAGR AIAKS AIGIU AIIXL AILAN AITGF AJBLW AJRNO AJZVZ ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMTXH AMXSW AMYLF AMYQR AOCGG ARCSS ARMRJ ASPBG AVWKF AXYYD AYJHY AZFZN B-. B0M BA0 BBWZM BDATZ BENPR BGLVJ BGNMA BSONS CAG CCPQU COF CS3 CSCUP D-I D1I DDRTE DL5 DNIVK DPUIP DU5 EAD EAP EAS EBLON EBS EDO EIOEI EJD EMK EPL ESBYG ESX FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC G-Y G-Z GGCAI GGRSB GJIRD GNWQR GQ6 GQ7 GQ8 GXS H13 HCIFZ HF~ HG5 HG6 HMJXF HQYDN HRMNR HVGLF HZ~ I-F I09 IAO IFM IGS IHE IJ- IKXTQ ISR ITC ITM IWAJR IXC IZIGR IZQ I~X I~Z J-C J0Z JBSCW JCJTX JZLTJ KB. KDC KOV KOW L6V LAK LLZTM M4Y M7S MA- MK~ N2Q N9A NB0 NDZJH NPVJJ NQJWS NU0 O9- O93 O9G O9I O9J OAM OVD P0- P19 P2P P9N PDBOC PF- PKN PT4 PT5 PTHSS QF4 QM1 QN7 QO4 QOK QOR QOS R4E R89 R9I RHV RNI RNS ROL RPX RSV RZC RZE RZK S16 S1Z S26 S27 S28 S3B SAP SCG SCLPG SCM SDH SHX SISQX SJYHP SNE SNPRN SNX SOHCF SOJ SPISZ SRMVM SSLCW STPWE SZN T13 T16 T9H TAE TEORI TN5 TSG TSK TSV TUC TUS U2A UG4 UOJIU UTJUX UZXMN VC2 VFIZW VH1 W23 W48 W4F WH7 WJK WK8 YLTOR Z45 Z5O Z7R Z7S Z7U Z7V Z7W Z7X Z7Y Z7Z Z81 Z83 Z85 Z86 Z87 Z88 Z8M Z8N Z8O Z8P Z8Q Z8R Z8S Z8T Z8W Z8Z Z91 Z92 ZE2 ZMTXR ZY4 ~02 ~8M ~EX AAPKM AAYXX ABBRH ABDBE ABFSG ACMFV ACSTC ADHKG AEZWR AFDZB AFHIU AFOHR AGQPQ AHPBZ AHWEU AIXLP ATHPR AYFIA CITATION PHGZM PHGZT AEIIB PMFND ABRTQ DWQXO PKEHL PQEST PQGLB PQQKQ PQUKI PRINS 7SR 8BQ 8FD JG9 PUEGO |
ID | FETCH-LOGICAL-c559t-87fdc5c3d0f6dd68487beb0a8d5ab90650880eadf9ce207629420179001262733 |
IEDL.DBID | U2A |
ISSN | 0022-2461 |
IngestDate | Fri Sep 05 04:33:58 EDT 2025 Tue Aug 12 01:11:06 EDT 2025 Tue Jun 17 21:02:30 EDT 2025 Tue Jun 10 20:29:00 EDT 2025 Fri Jun 27 04:39:14 EDT 2025 Tue Jul 01 01:25:19 EDT 2025 Thu Apr 24 22:51:12 EDT 2025 Fri Feb 21 02:45:50 EST 2025 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 10 |
Keywords | Monoethanolamine Plastic Substrate Zinc Acetate Wako Pure Chemical Industry Seed Layer |
Language | English |
License | http://www.springer.com/tdm |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c559t-87fdc5c3d0f6dd68487beb0a8d5ab90650880eadf9ce207629420179001262733 |
Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
PQID | 2259587512 |
PQPubID | 2043599 |
PageCount | 7 |
ParticipantIDs | proquest_miscellaneous_907934127 proquest_journals_2259587512 gale_infotracmisc_A411471519 gale_infotracacademiconefile_A411471519 gale_incontextgauss_ISR_A411471519 crossref_primary_10_1007_s10853_011_5263_8 crossref_citationtrail_10_1007_s10853_011_5263_8 springer_journals_10_1007_s10853_011_5263_8 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2011-05-01 |
PublicationDateYYYYMMDD | 2011-05-01 |
PublicationDate_xml | – month: 05 year: 2011 text: 2011-05-01 day: 01 |
PublicationDecade | 2010 |
PublicationPlace | Boston |
PublicationPlace_xml | – name: Boston – name: New York |
PublicationSubtitle | Full Set - Includes `Journal of Materials Science Letters |
PublicationTitle | Journal of materials science |
PublicationTitleAbbrev | J Mater Sci |
PublicationYear | 2011 |
Publisher | Springer US Springer Springer Nature B.V |
Publisher_xml | – name: Springer US – name: Springer – name: Springer Nature B.V |
References | SrivastavaJKAgarwalLBhattacharyyaABElectrochem Soc1989136341410.1149/1.20964631:CAS:528:DyaL1MXmsVGrtbs%3D LiuTQSakuraiOMizutaniNKatoMJ Mater Sci198621369810.1007/BF024030241:CAS:528:DyaL28XlvFKjur4%3D DuHYuanFHuangSLiJZhuYChem Lett20043377010.1246/cl.2004.7701:CAS:528:DC%2BD2cXkvFOnsrw%3D HiranoSMasuyaKKuwabaraMJ Phys Chem B2004108457610.1021/jp038014p1:CAS:528:DC%2BD2cXitFyitrc%3D OhyamaMKozukaHYokoTSakkaSCeram Soc Jpn19961042961:CAS:528:DyaK28XitlCjtrk%3D ChenMPeiZLSunCGongJHuangRFWenLSMater Sci Eng B20018521210.1016/S0921-5107(01)00584-0 PauportéTLincotDElectrochim Acta200045334510.1016/S0013-4686(00)00405-9 RaviendraDSharmaJKJ Appl Phys19855883810.1063/1.3363101:CAS:528:DyaL2MXltFCisr4%3D AgarwalGSpeyerRFJ Electrochem Soc1998145292010.1149/1.18387371:CAS:528:DyaK1cXltFGnsL8%3D MaisNReithmaierJPForchelAKohlsMSpanhelLMüllerGAppl Phys Lett199975200510.1063/1.1248971:CAS:528:DyaK1MXmtFKltbs%3D HiranoSTakeuchiNShimadaSMasuyaKIbeKTsunakaHKuwabaraMJ Appl Phys20059809430510.1063/1.2113418 OhyamaMKozukaHYokoTThin Solid Films19973067810.1016/S0040-6090(97)00231-91:CAS:528:DyaK2sXms1KktLg%3D VayssieresLAdv Mater20031546410.1002/adma.2003901081:CAS:528:DC%2BD3sXisFemtLs%3D KimYSTaiWPShuSJThin Solid Films200549115310.1016/j.tsf.2005.06.0131:CAS:528:DC%2BD2MXhtVeks7vL HaraKHoriguchiTKinoshitaTSayamaKSugiharaHArakawaHSolar Energy Mater Solar Cells20006411510.1016/S0927-0248(00)00065-91:CAS:528:DC%2BD3cXlvVKlt7w%3D VayssaieresLKeisKLindquistSHagfeldtAJ Phys Chem B2001105335010.1021/jp010026s KruzABrakechaKPuetzJAegerterMAThin Solid Films200650221210.1016/j.tsf.2005.07.276 XiangfengCDongliJDjurišicABLeungYHChem Phys Lett200540142610.1016/j.cplett.2004.11.091 LiHWangJLiuHYangCXuHLiXCuiHVacuum2004775710.1016/j.vacuum.2004.08.0031:CAS:528:DC%2BD2cXhtVSrsLjP N Mais (5263_CR7) 1999; 75 H Li (5263_CR10) 2004; 77 TQ Liu (5263_CR15) 1986; 21 M Chen (5263_CR1) 2001; 85 M Ohyama (5263_CR8) 1996; 104 L Vayssaieres (5263_CR16) 2001; 105 YS Kim (5263_CR11) 2005; 491 D Raviendra (5263_CR13) 1985; 58 M Ohyama (5263_CR9) 1997; 306 A Kruz (5263_CR2) 2006; 502 JK Srivastava (5263_CR3) 1989; 136 L Vayssieres (5263_CR17) 2003; 15 C Xiangfeng (5263_CR4) 2005; 401 S Hirano (5263_CR18) 2005; 98 T Pauporté (5263_CR12) 2000; 45 G Agarwal (5263_CR5) 1998; 145 K Hara (5263_CR6) 2000; 64 H Du (5263_CR14) 2004; 33 S Hirano (5263_CR19) 2004; 108 |
References_xml | – reference: LiHWangJLiuHYangCXuHLiXCuiHVacuum2004775710.1016/j.vacuum.2004.08.0031:CAS:528:DC%2BD2cXhtVSrsLjP – reference: VayssieresLAdv Mater20031546410.1002/adma.2003901081:CAS:528:DC%2BD3sXisFemtLs%3D – reference: RaviendraDSharmaJKJ Appl Phys19855883810.1063/1.3363101:CAS:528:DyaL2MXltFCisr4%3D – reference: HiranoSMasuyaKKuwabaraMJ Phys Chem B2004108457610.1021/jp038014p1:CAS:528:DC%2BD2cXitFyitrc%3D – reference: MaisNReithmaierJPForchelAKohlsMSpanhelLMüllerGAppl Phys Lett199975200510.1063/1.1248971:CAS:528:DyaK1MXmtFKltbs%3D – reference: HiranoSTakeuchiNShimadaSMasuyaKIbeKTsunakaHKuwabaraMJ Appl Phys20059809430510.1063/1.2113418 – reference: AgarwalGSpeyerRFJ Electrochem Soc1998145292010.1149/1.18387371:CAS:528:DyaK1cXltFGnsL8%3D – reference: HaraKHoriguchiTKinoshitaTSayamaKSugiharaHArakawaHSolar Energy Mater Solar Cells20006411510.1016/S0927-0248(00)00065-91:CAS:528:DC%2BD3cXlvVKlt7w%3D – reference: VayssaieresLKeisKLindquistSHagfeldtAJ Phys Chem B2001105335010.1021/jp010026s – reference: LiuTQSakuraiOMizutaniNKatoMJ Mater Sci198621369810.1007/BF024030241:CAS:528:DyaL28XlvFKjur4%3D – reference: KruzABrakechaKPuetzJAegerterMAThin Solid Films200650221210.1016/j.tsf.2005.07.276 – reference: SrivastavaJKAgarwalLBhattacharyyaABElectrochem Soc1989136341410.1149/1.20964631:CAS:528:DyaL1MXmsVGrtbs%3D – reference: KimYSTaiWPShuSJThin Solid Films200549115310.1016/j.tsf.2005.06.0131:CAS:528:DC%2BD2MXhtVeks7vL – reference: OhyamaMKozukaHYokoTThin Solid Films19973067810.1016/S0040-6090(97)00231-91:CAS:528:DyaK2sXms1KktLg%3D – reference: XiangfengCDongliJDjurišicABLeungYHChem Phys Lett200540142610.1016/j.cplett.2004.11.091 – reference: PauportéTLincotDElectrochim Acta200045334510.1016/S0013-4686(00)00405-9 – reference: ChenMPeiZLSunCGongJHuangRFWenLSMater Sci Eng B20018521210.1016/S0921-5107(01)00584-0 – reference: DuHYuanFHuangSLiJZhuYChem Lett20043377010.1246/cl.2004.7701:CAS:528:DC%2BD2cXkvFOnsrw%3D – reference: OhyamaMKozukaHYokoTSakkaSCeram Soc Jpn19961042961:CAS:528:DyaK28XitlCjtrk%3D – volume: 75 start-page: 2005 year: 1999 ident: 5263_CR7 publication-title: Appl Phys Lett doi: 10.1063/1.124897 – volume: 98 start-page: 094305 year: 2005 ident: 5263_CR18 publication-title: J Appl Phys doi: 10.1063/1.2113418 – volume: 108 start-page: 4576 year: 2004 ident: 5263_CR19 publication-title: J Phys Chem B doi: 10.1021/jp038014p – volume: 401 start-page: 426 year: 2005 ident: 5263_CR4 publication-title: Chem Phys Lett doi: 10.1016/j.cplett.2004.11.091 – volume: 15 start-page: 464 year: 2003 ident: 5263_CR17 publication-title: Adv Mater doi: 10.1002/adma.200390108 – volume: 45 start-page: 3345 year: 2000 ident: 5263_CR12 publication-title: Electrochim Acta doi: 10.1016/S0013-4686(00)00405-9 – volume: 77 start-page: 57 year: 2004 ident: 5263_CR10 publication-title: Vacuum doi: 10.1016/j.vacuum.2004.08.003 – volume: 58 start-page: 838 year: 1985 ident: 5263_CR13 publication-title: J Appl Phys doi: 10.1063/1.336310 – volume: 145 start-page: 2920 year: 1998 ident: 5263_CR5 publication-title: J Electrochem Soc doi: 10.1149/1.1838737 – volume: 104 start-page: 296 year: 1996 ident: 5263_CR8 publication-title: Ceram Soc Jpn doi: 10.2109/jcersj.104.296 – volume: 105 start-page: 3350 year: 2001 ident: 5263_CR16 publication-title: J Phys Chem B doi: 10.1021/jp010026s – volume: 64 start-page: 115 year: 2000 ident: 5263_CR6 publication-title: Solar Energy Mater Solar Cells doi: 10.1016/S0927-0248(00)00065-9 – volume: 136 start-page: 3414 year: 1989 ident: 5263_CR3 publication-title: Electrochem Soc doi: 10.1149/1.2096463 – volume: 21 start-page: 3698 year: 1986 ident: 5263_CR15 publication-title: J Mater Sci doi: 10.1007/BF02403024 – volume: 491 start-page: 153 year: 2005 ident: 5263_CR11 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2005.06.013 – volume: 502 start-page: 212 year: 2006 ident: 5263_CR2 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2005.07.276 – volume: 33 start-page: 770 year: 2004 ident: 5263_CR14 publication-title: Chem Lett doi: 10.1246/cl.2004.770 – volume: 306 start-page: 78 year: 1997 ident: 5263_CR9 publication-title: Thin Solid Films doi: 10.1016/S0040-6090(97)00231-9 – volume: 85 start-page: 212 year: 2001 ident: 5263_CR1 publication-title: Mater Sci Eng B doi: 10.1016/S0921-5107(01)00584-0 |
SSID | ssj0005721 |
Score | 2.1342843 |
Snippet | Transparent zinc oxide (ZnO) films were coated on seed layers prepared by the sol–gel method by chemical solution deposition method. Firstly, seed layers were... Transparent zinc oxide (ZnO) films were coated on seed layers prepared by the sol-gel method by chemical solution deposition method. Firstly, seed layers were... Transparent zinc oxide (ZnO) films were coated on seed layers prepared by the sol--gel method by chemical solution deposition method. Firstly, seed layers were... |
SourceID | proquest gale crossref springer |
SourceType | Aggregation Database Enrichment Source Index Database Publisher |
StartPage | 3537 |
SubjectTerms | Analysis Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Copper Cracks Crystallinity Crystallization Crystallography and Scattering Methods Deposition Ethanolamines Flat surfaces Glass substrates Hexamethylenetetramine High tech industries Low temperature Materials Science Methods Methyl cellosolve Monoethanolamine (MEA) Morphology Nitrides Organic chemistry Polymer Sciences Seeds Silicon substrates Sol-gel processes Solid Mechanics Transmittance Zinc acetate Zinc nitride Zinc oxide Zinc oxides |
SummonAdditionalLinks | – databaseName: ProQuest Central dbid: BENPR link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1fT9RAEJ_g8YIPRlBiFcnGkJhoNva27bZ9ImggSAANQkJ82XT_9EJS2vN6F8Mb38Fv6Cdx5rrlPIk877Sb3Z2d-c3u7G8AdkotTFIIzV2WGgxQnOaZjgsu0fVJoiuP5tUbTk7l4UV8dJlc-gO31qdV9jZxbqhtY-iM_APqXZ4guB6K3fEPTlWj6HbVl9B4BKtogrNkAKsf90-_ni2SPFIx7PnCiTmtv9fsHs-hq-J0RJgIGfFsyTP9a5_vXZTO_c_BU3jigSPb61Z6HVZcvQGP_6ITfAbmuPnJiWvKEyUzM7lB8FdV_q0la0rWEK8xokz2vf7CyqvqmlHm-4i16MVYVRAAZ-OJm-elM33DUDV_3_4auYp1taafw8XB_vmnQ-6LKHCDwcIUrV1pTWIiG5bSWplhgKKdDovMJoXOO4AWojqVuXEiRNOYx4J2KeEgidgm2oRB3dTuBTAXOWEsWqUiSmJLVIOxcGlkjTShKzMZQNhPoDKeYZwKXVRqwY1Mc65wzhXNucoCeHf3ybij13hI-A2tiiLaipryYkbFrG3V529nai_GuC5F9JIH8NYLlQ12bgr_zACHQExXS5JbS5K4r8xyc7_4yu_rVi20MAB210xfUq5a7ZpZq3LiHIyHIg3gfa8ziz_8d3QvH-7vFax1x9mUa7kFg-lk5l4jHprqba_0fwA7EwW5 priority: 102 providerName: ProQuest |
Title | Low-temperature crystallization of oriented ZnO film using seed layers prepared by sol–gel method |
URI | https://link.springer.com/article/10.1007/s10853-011-5263-8 https://www.proquest.com/docview/2259587512 https://www.proquest.com/docview/907934127 |
Volume | 46 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1Lb9QwEB71cYEDogVEoF1ZFRISKFLWSZzkuFvt9smCCisVLlbsOCukkFSbXaHe-A_8Q35JZxKn2y0PiVMOHjvy2J75xh5_BniVK67DlCvXxJHGAMUoN1ZB6gp0fYLoyv3m9YZ3E3E8DU4vw0t7j7vust27I8nGUt-57IauxaUtvZAL3403YTvE0J3y-KZ8sMrriHi_owgnsrTuKPNPTaw5o_sm-bez0cbljB_DI4sV2aAd3B3YMOUuPLzDIPgE9Hn13SV6KcuNzPT8GvFeUdjrlazKWUVUxggs2ZfyPcu_Ft8YJbvPWI2OixUpYW52NTdNKjpT1wxn468fP2emYO3z0k9hOh59Ojx27bsJrsb4YIEGLs90qP3My0WWiRhjEmWUl8ZZmKqkxWQezqA80YZ7aA2TgNPCJOgjEM74z2CrrErzHJjxDdcZGqLUD4OM2AUDbiI_00J7Jo-FA16nQKktqTi9bVHIFR0y6VyiziXpXMYOvLmtctUyavxL-IBGRRJTRUmpMLN0Wdfy5OOFHAQYykUIWBIHXluhvMKf69TeLMAuELnVmuTemiQuJb1e3A2-tEu5lmjwkhCjuj53gN0WU01KTytNtaxlQjSDQZ9HDrzt5syqhb_27sV_Sb-EB-2GNmVb7sHWYr40-4iIFqoHm_H4qAfbg_FwOKHv0eezEX6Ho8mHi16zPm4AO9kGYA |
linkProvider | Springer Nature |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV3NbtQwEB6V9gAcKn5FSgsWAiGBLLJO4iSHChVotUu3CyqtVPViEsdZVQrJdrOram-8A-_BQ_EkzGycLguit579J49nPJ_t8TcAz_NU6CARKTdRqPGAYlIepX7CJbo-SXTl3jx7w8FAdo_9jyfByQr8bP_CUFhluyfON-qs0nRH_gb1Lg4QXHfE29E5p6xR9LraptBo1GLfzC7wyFZv9z7g-r4QYm_36H2X26wCXCN6nqD555kOtJe5ucwyGSFiT03qJlEWJGncIBYX5ZvH2gg85YvYF6S2BAwkOnsP-70BawgzYrSitXe7g8-Hi6CSUHRafnJiamvfUZvPeugaOV1JBkJ6PFryhH_7g38eZuf-bu8OrFugynYazboLK6a8B7f_oC-8D7pfXXDitrLEzEyPZwg2i8L-7WRVziriUUZUy07LTyw_K74xirQfshq9JisSAvxsNDbzOHiWzhiawq_vP4amYE1u6wdwfC3ifQirZVWaR8CMZ4TOcBdMvMDPiNrQFyb0Mi21a_JIOuC2AlTaMppTYo1CLbiYSeYKZa5I5ipy4NVlk1FD53FV5We0KopoMkqKwxkm07pWvS-HasfHc2SIaCl24KWtlFc4uE7stwacAjFrLdXcXKqJdqyXi9vFV3YfqdVC6x1gl8XUkmLjSlNNaxUTx6HfEaEDr1udWfTw39ltXD3eU7jZPTroq35vsP8YbjVX6RTnuQmrk_HUbCEWm6RPrAEw-HrdNvcbkS5BZA |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV3NbtQwEB7BVkJw4B8RKGAhJCRQ2qyTOMlxBV1aWgoCKhUuJnbsFSIkq01WqJx4B96QJ2Fm43S75UdCnD12Yns889kefwPwwCqu45wr36SJxg2KUX6qotwX6PoE0ZWHi-wNL_bF9kH0_DA-dHlOmz7avb-S7N40EEtT1W5OC7t54uEbuhmfjvdiLkI_PQtrEXGzD2Bt9Ozd7tYyyiPhw54wnKjT-ovN3zWy4ppOG-hfbkoXDmh8CT70v97FnXzamLdqQ389xer4H327DBcdOGWjTpuuwBlTXYULJygLr4Heq7_4xGflyJiZnh0hwCxL956T1ZbVxJ2MSJa9r14y-7H8zCi6fsIa9JSszAnks-nMLGLfmTpiqP4_vn2fmJJ1-ayvw8F46-2Tbd8lavA1bkhatKi20LEOi8CKohApboKUUUGeFnGusg4EBqiyNtOGB2h-s4iTJSCsJRA_hTdgUNWVuQnMhIbrAi1fHsZRQXSGETdJWGihA2NT4UHQz5HUjsWckmmUcsm_TOMncfwkjZ9MPXh0XGXaUXj8Tfg-TbwkaoyKYm8m-bxp5M6b13IU4d4xQYSUefDQCdkaP65z95QBu0BsWiuS6yuSuHb1anGvX9LZjkaihc1i1OUh94AdF1NNioerTD1vZEa8htGQJx487jVq2cIfe3frn6TvwblXT8dyb2d_9zac7w7TKdJzHQbtbG7uIBpr1V234n4CNfQpaQ |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Low-temperature+crystallization+of+oriented+ZnO+film+using+seed+layers+prepared+by+sol-gel+method&rft.jtitle=Journal+of+materials+science&rft.au=Segawa%2C+Hiroyo&rft.au=Sakurai%2C+Hideaki&rft.au=Izumi%2C+Reiko&rft.au=Hayashi%2C+Toshiharu&rft.date=2011-05-01&rft.pub=Springer&rft.issn=0022-2461&rft.volume=46&rft.issue=10&rft.spage=3537&rft_id=info:doi/10.1007%2Fs10853-011-5263-8&rft.externalDBID=ISR&rft.externalDocID=A411471519 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0022-2461&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0022-2461&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0022-2461&client=summon |