Comparison Between NIST Graphene and AIST GaAs Quantized Hall Devices
Several graphene quantized Hall resistance (QHR) devices manufactured at the National Institute of Standards and Technology (NIST) were compared with GaAs QHR devices and a 100-<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math></inline-formula> standard...
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Published in | IEEE transactions on instrumentation and measurement Vol. 69; no. 6; pp. 3103 - 3108 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
IEEE
01.06.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Several graphene quantized Hall resistance (QHR) devices manufactured at the National Institute of Standards and Technology (NIST) were compared with GaAs QHR devices and a 100-<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math></inline-formula> standard resistor at the National Institute for Advanced Industrial Science and Technology (AIST). Measurements of a 100-<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math></inline-formula> resistor with graphene QHR devices agreed within 5 <inline-formula> <tex-math notation="LaTeX">\text{n}\Omega /\Omega </tex-math></inline-formula> of the values for a 100-<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math></inline-formula> resistor obtained through GaAs measurements. The electron density of the graphene devices was adjusted at AIST to restore device properties such that operation was possible at low magnetic flux densities of 4-6 T. This adjustment was accomplished by a functionalization method utilized at NIST, allowing for consistent tunability of the graphene QHR devices with simple annealing. Such a method replaces older and less predictable methods for adjusting graphene for metrological suitability. The milestone results demonstrate the ease with which graphene can be used to make resistance comparison measurements among many National Metrology Institutes (NMIs). |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0018-9456 1557-9662 |
DOI: | 10.1109/TIM.2019.2930436 |