High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode
We have studied the photoelectrochemical properties of both undoped and Si-doped GaN nanowire arrays in 1 mol l−1 solutions of hydrogen bromide and potassium bromide, which were used separately as electrolytes. It is observed that variations of the photocurrent with bias voltage depend strongly on t...
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Published in | Nanotechnology Vol. 24; no. 17; pp. 175401 - 1-5 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
03.05.2013
Institute of Physics |
Subjects | |
Online Access | Get full text |
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Summary: | We have studied the photoelectrochemical properties of both undoped and Si-doped GaN nanowire arrays in 1 mol l−1 solutions of hydrogen bromide and potassium bromide, which were used separately as electrolytes. It is observed that variations of the photocurrent with bias voltage depend strongly on the n-type doping in GaN nanowires in both electrolytes, which are analyzed in the context of GaN surface band bending and its variation with the incorporation of Si-doping. Maximum incident-photon-to-current-conversion efficiencies of ∼15% and 18% are measured for undoped and Si-doped GaN nanowires under ∼350 nm light illumination, respectively. Stable hydrogen generation is also observed at a zero bias potential versus the counter-electrode. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 0957-4484 1361-6528 |
DOI: | 10.1088/0957-4484/24/17/175401 |