Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH - ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flat...
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Published in | IEEE transactions on electron devices Vol. 54; no. 6; pp. 1438 - 1445 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.06.2007
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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