Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH - ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flat...
Saved in:
Published in | IEEE transactions on electron devices Vol. 54; no. 6; pp. 1438 - 1445 |
---|---|
Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.06.2007
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH - ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room-temperature cleaning as a pregate-oxidation cleaning, which does not employ an alkali solution. On the flat surface, the current drivability of a p-channel MOSFET on a Si(110) surface is three times larger than that on a Si(100) surface, and the current drivability of an n-channel MOSFET on a Si(100) surface can be improved compared with that without the flattening processes and alkali-free cleaning. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n-channel MOSFET on a Si(100) surface. Thus, a high-speed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. Furthermore, a CMOS implementation in which the current drivabilities of the p-channel and n-channel MOSFETs are balanced can be realized (balanced CMOS). These advantages are very useful in analog/digital mixed-signal circuits. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2007.896372 |