Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH - ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flat...
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Published in | IEEE transactions on electron devices Vol. 54; no. 6; pp. 1438 - 1445 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
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New York, NY
IEEE
01.06.2007
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH - ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room-temperature cleaning as a pregate-oxidation cleaning, which does not employ an alkali solution. On the flat surface, the current drivability of a p-channel MOSFET on a Si(110) surface is three times larger than that on a Si(100) surface, and the current drivability of an n-channel MOSFET on a Si(100) surface can be improved compared with that without the flattening processes and alkali-free cleaning. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n-channel MOSFET on a Si(100) surface. Thus, a high-speed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. Furthermore, a CMOS implementation in which the current drivabilities of the p-channel and n-channel MOSFETs are balanced can be realized (balanced CMOS). These advantages are very useful in analog/digital mixed-signal circuits. |
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AbstractList | In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH@@u-@ ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room-temperature cleaning as a pregate- oxidation cleaning, which does not employ an alkali solution. On the flat surface, the current drivability of a p-channel MOSFET on a Si(110) surface is three times larger than that on a Si(100) surface, and the current drivability of an n-channel MOSFET on a Si(100) surface can be improved compared with that without the flattening processes and alkali-free cleaning. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n- channel MOSFET on a Si(100) surface. Thus, a high-speed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. Furthermore, a CMOS implementation in which the current drivabilities of the p-channel and n-channel MOSFETs are balanced can be realized (balanced CMOS). These advantages are very useful in analog/digital mixed-signal circuits. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n-channel MOSFET on a Si(100) surface. [...] a high-speed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH - ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room-temperature cleaning as a pregate-oxidation cleaning, which does not employ an alkali solution. On the flat surface, the current drivability of a p-channel MOSFET on a Si(110) surface is three times larger than that on a Si(100) surface, and the current drivability of an n-channel MOSFET on a Si(100) surface can be improved compared with that without the flattening processes and alkali-free cleaning. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n-channel MOSFET on a Si(100) surface. Thus, a high-speed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. Furthermore, a CMOS implementation in which the current drivabilities of the p-channel and n-channel MOSFETs are balanced can be realized (balanced CMOS). These advantages are very useful in analog/digital mixed-signal circuits. In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH super(-) ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room-temperature cleaning as a pregate-oxidation cleaning, which does not employ an alkali solution. On the flat surface, the current drivability of a p-channel MOSFET on a Si(110) surface is three times larger than that on a Si(100) surface, and the current drivability of an n-channel MOSFET on a Si(100) surface can be improved compared with that without the flattening processes and alkali-free cleaning. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n-channel MOSFET on a Si(100) surface. Thus, a high-speed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. Furthermore, a CMOS implementation in which the current drivabilities of the p-channel and n-channel MOSFETs are balanced can be realized (balanced CMOS). These advantages are very useful in analog/digital mixed-signal circuits. |
Author | Gaubert, P. Ohmi, T. Teramoto, A. Arima, K. Endo, K. Hamada, T. Yamamoto, M. Nii, K. Akahori, H. Hirayama, M. Sugawa, S. |
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Cites_doi | 10.1109/16.337449 10.1109/16.936571 10.1109/IEDM.1995.499251 10.1109/55.944327 10.1103/PhysRevB.4.1950 10.1109/IEDM.2002.1175825 10.1109/TED.2003.812085 10.1109/VLSIT.2002.1015431 10.1109/VLSIT.2002.1015428 10.1109/IEDM.1999.824238 10.1109/VLSIT.2003.1221104 10.1143/JJAP.42.2106 10.1149/1.1837133 10.1109/TED.2006.871188 10.1109/16.123475 10.1063/1.362953 10.1088/0022-3727/39/1/R01 10.1109/VLSIT.2002.1015409 10.1109/55.285389 10.1109/IEDM.2003.1269172 10.1109/55.116944 10.1109/VLSIT.2003.1221138 10.1109/IEDM.2003.1269401 10.1109/IEDM.1998.746531 |
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Keywords | High performance MOSFET mobility Low noise circuit flicker Surface current Charge carrier mobility Roughness Channel surface orientation Mixed signal circuit n channel Mixed analogue-digital integrated circuits Cleaning 1/f noise Implementation CMOS p channel Complementary MOS technology noise Oxidation Room temperature |
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Snippet | In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily... The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n-channel... |
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SubjectTerms | Alkaline cleaning Applied sciences Balancing Channel Cleaning CMOS CMOS integrated circuits Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Flattening flicker High speed Integrated circuits Logic gates mobility MOSFET MOSFET circuits MOSFETs noise Oxidation Radicals roughness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon surface orientation Surface treatment Transistors |
Title | Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface |
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