Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature

• Published in: Advanced materials (Weinheim) Vol. 26; no. 25; pp. 4320 - 4325
• Main Authors: Li, Peisen, Chen, Aitian, Li, Dalai, Zhao, Yonggang, Zhang, Sen, Yang, Lifeng, Liu, Yan, Zhu, Meihong, Zhang, Huiyun, Han, Xiufeng
• Format: Journal Article
• Language: English
• Published: Germany Blackwell Publishing Ltd 02.07.2014
• Subjects: Electric fields; electric-field control of magnetism; Magnetization; Magnetoresistance; Magnetoresistivity; multiferroic; Piezoelectricity; Spintronics; straintronics; TMR; Tunnel junctions; Tunneling; TMR; spintronics; multiferroic; electric-field control of magnetism; straintronics

Electric‐field‐controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is considered as the milestone of ultralow power spintronic devices. Here, reversible, continuous magnetization rotation and manipulation is reported for TMR at room temperature in CoFeB/AlOx/CoFeB/piezoelectric...