Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature

Electric‐field‐controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is considered as the milestone of ultralow power spintronic devices. Here, reversible, continuous magnetization rotation and manipulation is reported for TMR at room temperature in CoFeB/AlOx/CoFeB/piezoelectric...

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Published inAdvanced materials (Weinheim) Vol. 26; no. 25; pp. 4320 - 4325
Main Authors Li, Peisen, Chen, Aitian, Li, Dalai, Zhao, Yonggang, Zhang, Sen, Yang, Lifeng, Liu, Yan, Zhu, Meihong, Zhang, Huiyun, Han, Xiufeng
Format Journal Article
LanguageEnglish
Published Germany Blackwell Publishing Ltd 02.07.2014
Subjects
Electric fields
electric-field control of magnetism
Magnetization
Magnetoresistance
Magnetoresistivity
multiferroic
Piezoelectricity
Spintronics
straintronics
TMR
Tunnel junctions
Tunneling
TMR
spintronics
multiferroic
electric-field control of magnetism
straintronics
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Summary:Electric‐field‐controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is considered as the milestone of ultralow power spintronic devices. Here, reversible, continuous magnetization rotation and manipulation is reported for TMR at room temperature in CoFeB/AlOx/CoFeB/piezoelectric structure by electric fields without the assistance of a magnetic field through strain‐mediated interaction. These results provide a new way of exploring electric‐field‐controlled spintronics.
Bibliography:ArticleID:ADMA201400617
Tsinghua National Laboratory for Information Science and Technology (TNList)
National Science Foundation of China - No. 10721404; No. 11304385
Ministry of Science and Technology of China - No. 2009CB929202; No. 2010CB934400
ark:/67375/WNG-22NNPFQZ-R
Special Fund of Tsinghua for basic research - No. 201110810625
istex:22EE75FB539A9C50FD93F32CD37EBD1B0736B734
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ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.201400617