Modeling Mechanism and Growth Reactions for New Nanofabrication Processes by Atomic Layer Deposition

Recent progress in the simulation of the chemistry of atomic layer deposition (ALD) is presented for technologically important materials such as alumina, silica, and copper metal. Self‐limiting chemisorption of precursors onto substrates is studied using density functional theory so as to determine...

Full description

Saved in:
Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 28; no. 27; pp. 5367 - 5380
Main Authors Elliott, Simon D., Dey, Gangotri, Maimaiti, Yasheng, Ablat, Hayrensa, Filatova, Ekaterina A., Fomengia, Glen N.
Format Journal Article
LanguageEnglish
Published Germany Blackwell Publishing Ltd 01.07.2016
Subjects
Aluminum oxide
Atomic layer deposition
Chemisorption
Computer simulation
Density functional theory
Modelling
nanofabrication
Nanostructure
Precursors
surface reaction mechanisms
thin films
surface reaction mechanisms
atomic layer deposition
density functional theory
nanofabrication
thin films
Online AccessGet full text

Cover

More Information
Summary:Recent progress in the simulation of the chemistry of atomic layer deposition (ALD) is presented for technologically important materials such as alumina, silica, and copper metal. Self‐limiting chemisorption of precursors onto substrates is studied using density functional theory so as to determine reaction pathways and aid process development. The main challenges for the future of ALD modeling are outlined.
Bibliography:ark:/67375/WNG-BQLBSBGM-N
istex:7BE8440BD5C4CD7A42378B50548B454F0F9F3464
ArticleID:ADMA201504043
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201504043