Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

• Published in: Nanoscale research letters Vol. 12; no. 1; p. 233
• Main Authors: Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng, Wang, Yongte
• Format: Journal Article
• Language: English
• Published: New York Springer US 29.03.2017; SpringerOpen
• Subjects: 3rd International Conference on ALD Applications & 2016 China ALD conference; ALD; Bandgap; Chemistry and Materials Science; Crystallization; Diffusion; La2O3; Materials Science; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Refractive index; La; Refractive index; Crystallization; ALD; Diffusion; O; Bandgap
• ISSN: 1931-7573; 1556-276X
• DOI: 10.1186/s11671-017-2018-8

La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.