Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device

To achieve an efficient hole injection into triphenylamine derivatives cast on an Au electrode, we focused on the use of Fullerene (C60)-doped triphenylamine derivative as a buffer layer. After measuring the current-voltage properties of a layered device with the Au/C60-doped triphenylamine derivati...

Full description

Saved in:
Bibliographic Details
Published inDenki kagaku oyobi kōgyō butsuri kagaku Vol. 88; no. 5; pp. 350 - 352
Main Authors MATSUDA, Shofu, ITAGAKI, Chikara, ITO, Masamichi, UMEDA, Minoru
Format Journal Article
LanguageEnglish
Published Tokyo The Electrochemical Society of Japan 05.09.2020
Japan Science and Technology Agency
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:To achieve an efficient hole injection into triphenylamine derivatives cast on an Au electrode, we focused on the use of Fullerene (C60)-doped triphenylamine derivative as a buffer layer. After measuring the current-voltage properties of a layered device with the Au/C60-doped triphenylamine derivative/triphenylamine derivative/Au, hole injection was improved only at the interface where C60 was introduced. In addition, when 1 mol% of C60 was doped, the energy barrier for the hole injection decreased to 0.06 eV from 0.43 eV. Overall, we successfully developed a device with enhanced rectification properties.
ISSN:1344-3542
2186-2451
DOI:10.5796/electrochemistry.20-64056