Rectification Characteristics of C60-doped 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine Dual-layer Device
To achieve an efficient hole injection into triphenylamine derivatives cast on an Au electrode, we focused on the use of Fullerene (C60)-doped triphenylamine derivative as a buffer layer. After measuring the current-voltage properties of a layered device with the Au/C60-doped triphenylamine derivati...
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Published in | Denki kagaku oyobi kōgyō butsuri kagaku Vol. 88; no. 5; pp. 350 - 352 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
The Electrochemical Society of Japan
05.09.2020
Japan Science and Technology Agency |
Subjects | |
Online Access | Get full text |
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Summary: | To achieve an efficient hole injection into triphenylamine derivatives cast on an Au electrode, we focused on the use of Fullerene (C60)-doped triphenylamine derivative as a buffer layer. After measuring the current-voltage properties of a layered device with the Au/C60-doped triphenylamine derivative/triphenylamine derivative/Au, hole injection was improved only at the interface where C60 was introduced. In addition, when 1 mol% of C60 was doped, the energy barrier for the hole injection decreased to 0.06 eV from 0.43 eV. Overall, we successfully developed a device with enhanced rectification properties. |
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ISSN: | 1344-3542 2186-2451 |
DOI: | 10.5796/electrochemistry.20-64056 |