High-Performance and Environmentally Stable Planar Heterojunction Perovskite Solar Cells Based on a Solution-Processed Copper-Doped Nickel Oxide Hole-Transporting Layer

An effective approach to significantly increase the electrical conductivity of a NiOx hole‐transporting layer (HTL) to achieve high‐efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu‐doped NiOx HTL show a remarkably improved power conver...

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Published inAdvanced materials (Weinheim) Vol. 27; no. 4; pp. 695 - 701
Main Authors Kim, Jong H., Liang, Po-Wei, Williams, Spencer T., Cho, Namchul, Chueh, Chu-Chen, Glaz, Micah S., Ginger, David S., Jen, Alex K.-Y.
Format Journal Article
LanguageEnglish
Published Germany Blackwell Publishing Ltd 27.01.2015
Subjects
air-stability
Copper
copper doping
Electrical conductivity
Electrical resistivity
Heterojunctions
hole-transporting material
nickel oxide
perovskite solar cells
Perovskites
Photovoltaic cells
Resistivity
Solar cells
copper doping
nickel oxide
hole-transporting material
air-stability
perovskite solar cells
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Summary:An effective approach to significantly increase the electrical conductivity of a NiOx hole‐transporting layer (HTL) to achieve high‐efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu‐doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu‐doped NiOx to larger bandgap perovskites is also demonstrated in this study.
Bibliography:ArticleID:ADMA201404189
istex:EEC692D765297AE6E9E7067E3A605AD6835923C0
ark:/67375/WNG-JTMWL0XF-5
National Science Foundation Graduate Research Fellowship Program - No. DGE-1256082
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.201404189