X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates
On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect‐free alternative semiconductor structures on Si. Ge nanoclusters were selectively...
Saved in:
Published in | Journal of applied crystallography Vol. 46; no. 4; pp. 868 - 873 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
5 Abbey Square, Chester, Cheshire CH1 2HU, England
International Union of Crystallography
01.08.2013
Blackwell Publishing Ltd |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect‐free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano‐islands on silicon‐on‐insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing‐incidence diffraction using a laboratory‐based X‐ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano‐islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials. |
---|---|
Bibliography: | ark:/67375/WNG-7N1B91DX-Z istex:268AEAF6F4DCA8C4FF7DDFBAB2898BE1F9F6E2D4 ArticleID:JCRXZ5001 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2 |
ISSN: | 1600-5767 0021-8898 1600-5767 |
DOI: | 10.1107/S0021889813003518 |