Two-Dimensional Layered Heterostructures Synthesized from Core-Shell Nanowires
Controlled stacking of different two‐dimensional (2D) atomic layers will greatly expand the family of 2D materials and broaden their applications. A novel approach for synthesizing MoS2/WS2 heterostructures by chemical vapor deposition has been developed. The successful synthesis of pristine MoS2/WS...
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Published in | Angewandte Chemie International Edition Vol. 54; no. 31; pp. 8957 - 8960 |
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Main Authors | , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
27.07.2015
WILEY‐VCH Verlag Wiley Subscription Services, Inc |
Edition | International ed. in English |
Subjects | |
Online Access | Get full text |
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Summary: | Controlled stacking of different two‐dimensional (2D) atomic layers will greatly expand the family of 2D materials and broaden their applications. A novel approach for synthesizing MoS2/WS2 heterostructures by chemical vapor deposition has been developed. The successful synthesis of pristine MoS2/WS2 heterostructures is attributed to using core–shell WO3−x/MoO3−x nanowires as a precursor, which naturally ensures the sequential growth of MoS2 and WS2. The obtained heterostructures exhibited high crystallinity, strong interlayer interaction, and high mobility, suggesting their promising applications in nanoelectronics. The stacking orientations of the two layers were also explored from both experimental and theoretical aspects. It is elucidated that the rational design of precursors can accurately control the growth of high‐quality 2D heterostructures. Moreover, this simple approach opens up a new way for creating various novel 2D heterostructures by using a large variety of heteronanomaterials as precursors.
2D MoS2/WS2 heterostructures were successfully grown by using core–shell WO3−x/MoO3−x nanowires as a precursor in a CVD process. This method opens up a new way to synthesize various functional 2D heterostructures for novel electronic and optoelectronic devices. |
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Bibliography: | National Program for Thousand Young Talents of China NSFC - No. 21303041 L.J. acknowledges NSFC (21322303, 51372134), National Program for Thousand Young Talents of China, Tsinghua University Initiative Scientific Research Program, and Tsinghua-Foxconn Nanotechnology Research Center Research Program. R.Z. acknowledges NSFC (21303041), Beijing National Laboratory for Molecular Sciences (2013006), and high-performance grid computing platform of Henan Polytechnic University. J.Z. acknowledges NSFC (51322210, 61434001) and Director Fund of WNLO. C.J. acknowledges NSFC (51222202, 51410305074 and 51472215), the MOST (2014CB932500 and 2015CB921000), and the Fundamental Research Funds for the Central Universities (2014XZZX003-07). MOST - No. 2014CB932500; No. 2015CB921000 Tsinghua University Initiative Scientific Research Program NSFC - No. 51322210; No. 61434001 Director Fund of WNLO NSFC - No. 51222202; No. 51410305074; No. 51472215 Tsinghua-Foxconn Nanotechnology Research Center Research Program istex:F39B1873498CAF1B688D2C7B36135794773E98A7 Beijing National Laboratory for Molecular Sciences - No. 2013006 NSFC - No. 21322303; No. 51372134 Fundamental Research Funds for the Central Universities - No. 2014XZZX003-07 ArticleID:ANIE201502461 ark:/67375/WNG-S5CGRTDT-0 L.J. acknowledges NSFC (21322303, 51372134), National Program for Thousand Young Talents of China, Tsinghua University Initiative Scientific Research Program, and Tsinghua‐Foxconn Nanotechnology Research Center Research Program. R.Z. acknowledges NSFC (21303041), Beijing National Laboratory for Molecular Sciences (2013006), and high‐performance grid computing platform of Henan Polytechnic University. J.Z. acknowledges NSFC (51322210, 61434001) and Director Fund of WNLO. C.J. acknowledges NSFC (51222202, 51410305074 and 51472215), the MOST (2014CB932500 and 2015CB921000), and the Fundamental Research Funds for the Central Universities (2014XZZX003‐07). These authors contributed equally to this work. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1433-7851 1521-3773 |
DOI: | 10.1002/anie.201502461 |