Underlayer Designs to Enhance EUV Resist Performance

Extreme ultraviolet (EUV) lithography has gained momentum as the method of choice for <32-nm half-pitch device fabrication. In this paper, we describe our initial efforts to increase the EUV resist's performance via introduction of a thermally crosslinkable underlayer. We have demonstrated t...

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Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 22; no. 1; pp. 117 - 122
Main Authors Guerrero, Douglas J., Xu, Hao, Mercado, Ramil, Blackwell, James
Format Journal Article
LanguageEnglish
Published Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.01.2009
Japan Science and Technology Agency
Subjects
Crosslinking
Devices
EUV
Film thickness
Lithography
PAG
photoacid generator
Photopolymers
Resists
sensitizer
Stacks
Ultraviolet
underlayer
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Summary:Extreme ultraviolet (EUV) lithography has gained momentum as the method of choice for <32-nm half-pitch device fabrication. In this paper, we describe our initial efforts to increase the EUV resist's performance via introduction of a thermally crosslinkable underlayer. We have demonstrated the benefits of adding an EUV underlayer into the regular EUV litho stack and investigated the effect of underlayer film thickness, post-coat bake temperature, and adding other additives such as PAG and sensitizer on the overall litho performance of EUV resists.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0914-9244
1349-6336
1349-6336
DOI:10.2494/photopolymer.22.117