Design and Development of ArF Photoresist for Implant Layers

Our recent progress on the development of ArF photoresist (PR) for implant layers is reported. Since scum-free patterning is the critical property of an implant PR, a specific focus has been on eliminating scum while maintaining other lithographic performances. Through the optimization of formulatio...

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Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 23; no. 2; pp. 259 - 264
Main Authors Yang, Youngsoo, Lee, Jun Ho, Kim, Tae Ho, Choi, Seung Jib, Choi, Sang Jun, Chang, Tuwon, Kim, Seongjune, Kim, Dongwon, Kim, Hyereun, Kim, Youngho, Chae, Sung-Ki, Kim, Jae Hyun
Format Journal Article
LanguageEnglish
Published Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.01.2010
Japan Science and Technology Agency
Subjects
193 nm lithography
Formulations
Implants
ion implantation
Monomers
Optimization
Patterning
Photopolymers
photoresis
Photoresists
Scum
Secondary ion mass spectrometry
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Summary:Our recent progress on the development of ArF photoresist (PR) for implant layers is reported. Since scum-free patterning is the critical property of an implant PR, a specific focus has been on eliminating scum while maintaining other lithographic performances. Through the optimization of formulation with respect to k value and the use of novel monomers with less bulky substituents, a poly-methacrylate implant PR with minimal scum was obtained. Finally, ion-stopping ability of the prepared PR was tested via secondary ion mass spectrometry (SIMS) and was found to be sufficient for implant layer applications.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0914-9244
1349-6336
1349-6336
DOI:10.2494/photopolymer.23.259