Change Of Nano Material Electrical Characteristics For Medical System Applications

• Published in: International journal of nanomedicine Vol. 14; pp. 10119 - 10122
• Main Authors: Chen, Peiqin, Zhang, Xingye, Jiang, Kemin, Zhang, Qiang, Qi, Shaocheng, Man, Weidong, Webster, Thomas J, Dai, Mingzhi
• Format: Journal Article
• Language: English
• Published: New Zealand Dove Medical Press Limited 01.01.2019; Taylor & Francis Ltd; Dove; Dove Medical Press
• Subjects: Artificial intelligence; Artificial neural networks; Biosensing Techniques - instrumentation; Biosensors; capacitance-voltage (c-v); current-voltage (i-v); Detection equipment; Electric properties; electrical properties; Electricity; Medical equipment; n-type semiconductor; Nanomaterials; Nanostructures - chemistry; Oxides; Oxides - chemistry; p-type; Photoelectron Spectroscopy; Semiconductors; Semiconductors (Materials); Sensors; Short Report; Skin; Spectrum analysis; Technology application; Thermodynamics; Thin films; Tin; Transistors; xps; Zinc compounds; China; currentvoltage; capacitancevoltage; CV; ntype semiconductor; sensors; electrical properties; ptype semiconductor; IV
• ISSN: 1178-2013; 1176-9114; 1178-2013
• DOI: 10.2147/IJN.S215244

Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.