Light-Induced Ambient Degradation of Few-Layer Black Phosphorus: Mechanism and Protection
The environmental instability of single‐ or few‐layer black phosphorus (BP) has become a major hurdle for BP‐based devices. The degradation mechanism remains unclear and finding ways to protect BP from degradation is still highly challenging. Based on ab initio electronic structure calculations and...
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Published in | Angewandte Chemie International Edition Vol. 55; no. 38; pp. 11437 - 11441 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Germany
Blackwell Publishing Ltd
12.09.2016
Wiley Subscription Services, Inc |
Edition | International ed. in English |
Subjects | |
Online Access | Get full text |
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Summary: | The environmental instability of single‐ or few‐layer black phosphorus (BP) has become a major hurdle for BP‐based devices. The degradation mechanism remains unclear and finding ways to protect BP from degradation is still highly challenging. Based on ab initio electronic structure calculations and molecular dynamics simulations, a three‐step picture on the ambient degradation of BP is provided: generation of superoxide under light, dissociation of the superoxide, and eventual breakdown under the action of water. The well‐matched band gap and band‐edge positions for the redox potential accelerates the degradation of thinner BP. Furthermore, it was found that the formation of P‐O‐P bonds can greatly stabilize the BP framework. A possible protection strategy using a fully oxidized BP layer as the native capping is thus proposed. Such a fully oxidization layer can resist corrosion from water and leave the BP underneath intact with simultaneous high hole mobility.
Protected by native oxide: A three‐step picture of the ambient degradation of black phosphorus (BP) is given. A possible protection strategy using a fully oxidized BP layer as the capping is proposed. Such a fully oxidized layer can resist corrosion from water and leave the BP underneath intact with simultaneous high hole mobility. |
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Bibliography: | NSF of Jiangsu - No. BK20130016 SRFDP - No. 20130092110029; No. 20130092120042 ArticleID:ANIE201605168 NSFC - No. 21525311; No. 21373045; No. 11404056 istex:B01C94F9CCFC69919D847F918783200B4B6CD9ED Central Universities of China ark:/67375/WNG-10ZGMQM3-N ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
ISSN: | 1433-7851 1521-3773 1521-3773 |
DOI: | 10.1002/anie.201605168 |