Understanding voltage-controlled magnetic anisotropy effect at Co/oxide interface

The voltage-controlled magnetic anisotropy (VCMA) effect is a key to realising high-speed, ultralow-power consumption spintronic devices. The fcc-Co-(111)-based stack is a promising candidate for the achievement of large VCMA coefficients. However, only a few studies on the fcc-Co-(111)-based stack...

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Published inScientific reports Vol. 13; no. 1; p. 10640
Main Authors Nozaki, Tomohiro, Okabayashi, Jun, Tamaru, Shingo, Konoto, Makoto, Nozaki, Takayuki, Yuasa, Shinji
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 30.06.2023
Nature Publishing Group
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Summary:The voltage-controlled magnetic anisotropy (VCMA) effect is a key to realising high-speed, ultralow-power consumption spintronic devices. The fcc-Co-(111)-based stack is a promising candidate for the achievement of large VCMA coefficients. However, only a few studies on the fcc-Co-(111)-based stack have been reported and the VCMA effect has not been well understood. Previously, we observed a significant increase in the voltage-controlled coercivity (VCC) in the Pt/Ru/Co/CoO/TiO x structure upon post-annealing. However, the mechanism underlying this enhancement remains unclear. This study performs multiprobe analyses on this structure before and after post-annealing and discusses the origin of the VCMA effect at the Co/oxide interface. X-ray magnetic circular dichroism measurement revealed an increase in the orbital magnetic moment owing to post-annealing, accompanied by a significant increase in VCC. We speculate that the diffusion of Pt atoms into the vicinity of Co/oxide interface enhances the interfacial orbital magnetic moment and the VCMA at the interface. These results provide a guideline for designing structures to obtain a large VCMA effect in fcc-Co-(111)-based stacks.
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-023-37422-4