High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electro...
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| Published in | Nanoscale research letters Vol. 15; no. 1; pp. 47 - 6 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
Springer US
22.02.2020
Springer Nature B.V SpringerOpen |
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| Abstract | Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga
2
O
3
heterojunction was developed and investigated. The β-Ga
2
O
3
layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (
2
¯
01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (
R
) of 27.43 AW
−1
under a 245-nm illumination (27 μWcm
−2
) and the maximum detectivity (
D
*) of 3.14 × 10
12
cmHz
1/2
W
−1
, which was attributed to the p-NiO/n-β-Ga
2
O
3
heterojunction. |
|---|---|
| AbstractList | Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga
2
O
3
heterojunction was developed and investigated. The β-Ga
2
O
3
layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (
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\begin{document}$$ \overline{2} $$\end{document}
2
¯
01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (
R
) of 27.43 AW
−1
under a 245-nm illumination (27 μWcm
−2
) and the maximum detectivity (
D
*) of 3.14 × 10
12
cmHz
1/2
W
−1
, which was attributed to the p-NiO/n-β-Ga
2
O
3
heterojunction. Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ([Formula: see text] 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW-1 under a 245-nm illumination (27 μWcm-2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W-1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ([Formula: see text] 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW-1 under a 245-nm illumination (27 μWcm-2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W-1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction. Abstract Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ( 2¯ $$ \overline{2} $$ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction. Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction. Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga 2 O 3 heterojunction was developed and investigated. The β-Ga 2 O 3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ( $$ \overline{2} $$ 2 ¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity ( R ) of 27.43 AW −1 under a 245-nm illumination (27 μWcm −2 ) and the maximum detectivity ( D *) of 3.14 × 10 12 cmHz 1/2 W −1 , which was attributed to the p-NiO/n-β-Ga 2 O 3 heterojunction. Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga 2 O 3 heterojunction was developed and investigated. The β-Ga 2 O 3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ( 2 ¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity ( R ) of 27.43 AW −1 under a 245-nm illumination (27 μWcm −2 ) and the maximum detectivity ( D *) of 3.14 × 10 12 cmHz 1/2 W −1 , which was attributed to the p-NiO/n-β-Ga 2 O 3 heterojunction. |
| ArticleNumber | 47 |
| Author | Teng, Kar Seng Xiang, Jinzhong Wang, Fang Lau, Shu Ping Tang, Libin Jia, Menghan |
| Author_xml | – sequence: 1 givenname: Menghan surname: Jia fullname: Jia, Menghan organization: School of Materials Science and Engineering, Yunnan University, Kunming Institute of Physics, Yunnan Key Laboratory of Advanced Photoelectric Materials & Devices – sequence: 2 givenname: Fang surname: Wang fullname: Wang, Fang organization: School of Materials Science and Engineering, Yunnan University, Kunming Institute of Physics, Yunnan Key Laboratory of Advanced Photoelectric Materials & Devices – sequence: 3 givenname: Libin surname: Tang fullname: Tang, Libin email: scitang@163.com organization: Kunming Institute of Physics, Yunnan Key Laboratory of Advanced Photoelectric Materials & Devices – sequence: 4 givenname: Jinzhong surname: Xiang fullname: Xiang, Jinzhong email: jzhxiang@ynu.edu.cn organization: School of Physics and Astronomy, Yunnan University – sequence: 5 givenname: Kar Seng surname: Teng fullname: Teng, Kar Seng email: k.s.teng@swansea.ac.uk organization: College of Engineering, Swansea University – sequence: 6 givenname: Shu Ping surname: Lau fullname: Lau, Shu Ping organization: Department of Applied Physics, The Hong Kong Polytechnic University |
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| Keywords | UV photodetector β-Ga NiO O Heterojunction |
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| Snippet | Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The... Abstract Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical... |
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| SubjectTerms | Annealing Chemistry and Materials Science Crystal structure Gallium oxides Heterojunction Heterojunctions Magnetron sputtering Materials Science Metal oxide semiconductors Metal oxides Military technology Molecular Medicine Morphology Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Nickel oxides NiO Optical properties Phase transitions Photometers Semiconductor materials Semiconductors Spectrum analysis Topography Ultraviolet detectors UV photodetector β-Ga2O3 |
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| Title | High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction |
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