High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

• Published in: Nanoscale research letters Vol. 15; no. 1; pp. 47 - 6
• Main Authors: Jia, Menghan, Wang, Fang, Tang, Libin, Xiang, Jinzhong, Teng, Kar Seng, Lau, Shu Ping
• Format: Journal Article
• Language: English
• Published: New York Springer US 22.02.2020; Springer Nature B.V; SpringerOpen
• Subjects: Annealing; Chemistry and Materials Science; Crystal structure; Gallium oxides; Heterojunction; Heterojunctions; Magnetron sputtering; Materials Science; Metal oxide semiconductors; Metal oxides; Military technology; Molecular Medicine; Morphology; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Nickel oxides; NiO; Optical properties; Phase transitions; Photometers; Semiconductor materials; Semiconductors; Spectrum analysis; Topography; Ultraviolet detectors; UV photodetector; β-Ga2O3; UV photodetector; β-Ga; NiO; O; Heterojunction
• ISSN: 1931-7573; 1556-276X
• DOI: 10.1186/s11671-020-3271-9

Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga 2 O 3 heterojunction was developed and investigated. The β-Ga 2 O 3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ( 2 ¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity ( R ) of 27.43 AW −1 under a 245-nm illumination (27 μWcm −2 ) and the maximum detectivity ( D *) of 3.14 × 10 12  cmHz 1/2  W −1 , which was attributed to the p-NiO/n-β-Ga 2 O 3 heterojunction.