Direct Synthesis of Graphene Dendrites on SiO2/Si Substrates by Chemical Vapor Deposition
The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonst...
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Published in | Nanoscale research letters Vol. 15; no. 1; pp. 16 - 10 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
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Springer US
17.01.2020
Springer Nature B.V SpringerOpen |
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Abstract | The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO
2
/Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO
2
surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO
2
/Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are ~ 286 Scm
−1
and ~ 574 cm
2
(Vs)
−1
, respectively. Young’s modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications. |
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AbstractList | The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO2/Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO2 surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO2/Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are ~ 286 Scm−1 and ~ 574 cm2(Vs)−1, respectively. Young’s modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications. The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO2/Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO2 surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO2/Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are ~ 286 Scm-1 and ~ 574 cm2(Vs)-1, respectively. Young's modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications.The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO2/Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO2 surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO2/Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are ~ 286 Scm-1 and ~ 574 cm2(Vs)-1, respectively. Young's modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications. Abstract The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO2/Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO2 surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO2/Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are ~ 286 Scm−1 and ~ 574 cm2(Vs)−1, respectively. Young’s modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications. The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO 2 /Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO 2 surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO 2 /Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are ~ 286 Scm −1 and ~ 574 cm 2 (Vs) −1 , respectively. Young’s modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications. |
ArticleNumber | 16 |
Author | Wang, Jihua Tian, Meng Yu, Fapeng Li, Qingbo Sun, Li Li, Zhenhua Xu, Shicai Li, Chunhui Zhao, Xian Li, Yingxian |
Author_xml | – sequence: 1 givenname: Yingxian surname: Li fullname: Li, Yingxian organization: Shandong Key Laboratory of Biophysics, Institute of Biophysics, College of Physics and Information, Dezhou University, Institute of Crystal Materials, Advanced Research Center for Optics, Shandong University – sequence: 2 givenname: Zhenhua surname: Li fullname: Li, Zhenhua organization: Shandong Key Laboratory of Biophysics, Institute of Biophysics, College of Physics and Information, Dezhou University – sequence: 3 givenname: Qingbo surname: Li fullname: Li, Qingbo organization: Institute of Crystal Materials, Advanced Research Center for Optics, Shandong University – sequence: 4 givenname: Meng surname: Tian fullname: Tian, Meng organization: Shandong Key Laboratory of Biophysics, Institute of Biophysics, College of Physics and Information, Dezhou University – sequence: 5 givenname: Chunhui surname: Li fullname: Li, Chunhui organization: Shandong Key Laboratory of Biophysics, Institute of Biophysics, College of Physics and Information, Dezhou University – sequence: 6 givenname: Li surname: Sun fullname: Sun, Li organization: Institute of Crystal Materials, Advanced Research Center for Optics, Shandong University – sequence: 7 givenname: Jihua surname: Wang fullname: Wang, Jihua organization: Shandong Key Laboratory of Biophysics, Institute of Biophysics, College of Physics and Information, Dezhou University – sequence: 8 givenname: Xian surname: Zhao fullname: Zhao, Xian organization: Institute of Crystal Materials, Advanced Research Center for Optics, Shandong University – sequence: 9 givenname: Shicai surname: Xu fullname: Xu, Shicai email: xushicai001@163.com organization: Shandong Key Laboratory of Biophysics, Institute of Biophysics, College of Physics and Information, Dezhou University – sequence: 10 givenname: Fapeng surname: Yu fullname: Yu, Fapeng email: fapengyu@sdu.edu.cn organization: Institute of Crystal Materials, Advanced Research Center for Optics, Shandong University |
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Keywords | CVD SiO Graphene dendrites Si substrates Nanoelectronic applications |
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SubjectTerms | Chemical vapor deposition Chemistry and Materials Science CVD Dendrites Electron mobility Fabrication Graphene Graphene dendrites Hall effect Hydrogels Materials Science Mechanical properties Modulus of elasticity Molecular Medicine Morphology Nano Express Nanochemistry Nanoelectronic applications Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Organic chemistry Silicon dioxide Silicon substrates SiO2/Si substrates Substrates Synthesis Vapors |
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Title | Direct Synthesis of Graphene Dendrites on SiO2/Si Substrates by Chemical Vapor Deposition |
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