Direct Synthesis of Graphene Dendrites on SiO2/Si Substrates by Chemical Vapor Deposition

The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonst...

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Published inNanoscale research letters Vol. 15; no. 1; pp. 16 - 10
Main Authors Li, Yingxian, Li, Zhenhua, Li, Qingbo, Tian, Meng, Li, Chunhui, Sun, Li, Wang, Jihua, Zhao, Xian, Xu, Shicai, Yu, Fapeng
Format Journal Article
LanguageEnglish
Published New York Springer US 17.01.2020
Springer Nature B.V
SpringerOpen
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Summary:The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO 2 /Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO 2 surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO 2 /Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are ~ 286 Scm −1 and ~ 574 cm 2 (Vs) −1 , respectively. Young’s modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications.
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ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-020-3245-y