Direct Synthesis of Graphene Dendrites on SiO2/Si Substrates by Chemical Vapor Deposition
The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonst...
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Published in | Nanoscale research letters Vol. 15; no. 1; pp. 16 - 10 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer US
17.01.2020
Springer Nature B.V SpringerOpen |
Subjects | |
Online Access | Get full text |
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Summary: | The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO
2
/Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO
2
surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO
2
/Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are ~ 286 Scm
−1
and ~ 574 cm
2
(Vs)
−1
, respectively. Young’s modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
ISSN: | 1931-7573 1556-276X |
DOI: | 10.1186/s11671-020-3245-y |