Concepts of ferrovalley material and anomalous valley Hall effect

• Published in: Nature communications Vol. 7; no. 1; p. 13612
• Main Authors: Tong, Wen-Yi, Gong, Shi-Jing, Wan, Xiangang, Duan, Chun-Gang
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 16.12.2016; Nature Publishing Group; Nature Portfolio
• Subjects: 119/118; 639/301/357/1018; 639/766/119/1001; 639/766/119/995; Asymmetry; Collaboration; Electromagnetism; Electrons; Humanities and Social Sciences; Information storage; multidisciplinary; Phase transitions; Physics; Random access memory; Science; Science (multidisciplinary); Symmetry; China
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/ncomms13612

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage, as well as electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization, or ferromagnetic materials with spontaneous spin polarization, here we introduce a new member of ferroic family, that is, a ferrovalley material with spontaneous valley polarization. Combining a two-band k · p model with first-principles calculations, we show that 2H-VSe 2 monolayer, where the spin–orbit coupling coexists with the intrinsic exchange interaction of transition-metal d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and, more interestingly, anomalous valley Hall effect. On account of the latter, functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory and valley filter, are contemplated for valleytronic applications. Spontaneous polarization leads to various functionalities promising for future information storage and electronics. Here, the authors propose the concept of ferrovalley material with spontaneous valley polarization in monolayer 2H-VSe 2 .