Artificial spin ice phase-change memory resistors

Abstract We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passa...

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Bibliographic Details
Published inNew journal of physics Vol. 24; no. 2; pp. 23020 - 23035
Main Authors Caravelli, Francesco, Chern, Gia-Wei, Nisoli, Cristiano
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2022
Subjects
artificial spin ice
Computer memory
Domain walls
Electric fields
Magnetic fields
Magnetism
magnetoresistance
Memristors
Nanowires
Physics
Resistors
Spin dynamics
Spin ice
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Summary:Abstract We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passage in the system. This introduces a current-dependent effect for a dynamic resistive state. We simulate a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe electrical memory behavior with an I – V hysteretic pinched loop, typical of memristors. These results can be extended to the more complex geometries in which artificial spin ice can be designed to engineer the hysteresis curve.
Bibliography:NJP-113946.R1
USDOE
ISSN:1367-2630
1367-2630
DOI:10.1088/1367-2630/ac4c0a