Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

• Published in: Nature communications Vol. 9; no. 1; pp. 4095 - 7
• Main Authors: Engel, Michael, Farmer, Damon B., Azpiroz, Jaione Tirapu, Seo, Jung-Woo T., Kang, Joohoon, Avouris, Phaedon, Hersam, Mark C., Krupke, Ralph, Steiner, Mathias
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 05.10.2018; Nature Publishing Group; Nature Portfolio
• Subjects: 140/133; 142/126; 147/135; 147/3; 639/925/357; 639/925/918; 639/925/927; Deposition; Electronics industry; Graphene; Humanities and Social Sciences; Integration; multidisciplinary; Nanoelectronics; Nanomaterials; Nanotechnology; Nanotechnology devices; Nanotubes; Placement; Science; Science (multidisciplinary); Substrates
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-018-06604-4

Directed placement of solution-based nanomaterials at predefined locations with nanoscale precision limits bottom-up integration in semiconductor process technology. We report a method for electric-field-assisted placement of nanomaterials from solution by means of large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, and then are removed once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas >1 mm 2 . In order to demonstrate the broad applicability, we have assembled representative zero-dimensional, one-dimensional, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Ultimately, this method opens a route to bottom-up integration of nanomaterials for industry-scale applications. The placement of nanomaterials at predefined locations is a key requirement for their integration in nanoelectronic devices. Here, the authors devise a method allowing placement of solution-based nanomaterials by using structured graphene layers as deposition sites with the aid of an electric field.