Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices
Single-quantum emitters are an important resource for photonic quantum technologies, constituting building blocks for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of such functions is achieved through systems that provide both strong light–matter i...
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Published in | Nature communications Vol. 8; no. 1; pp. 889 - 12 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
12.10.2017
Nature Publishing Group Nature Portfolio |
Subjects | |
Online Access | Get full text |
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Summary: | Single-quantum emitters are an important resource for photonic quantum technologies, constituting building blocks for single-photon sources, stationary qubits, and deterministic quantum gates. Robust implementation of such functions is achieved through systems that provide both strong light–matter interactions and a low-loss interface between emitters and optical fields. Existing platforms providing such functionality at the single-node level present steep scalability challenges. Here, we develop a heterogeneous photonic integration platform that provides such capabilities in a scalable on-chip implementation, allowing direct integration of GaAs waveguides and cavities containing self-assembled InAs/GaAs quantum dots—a mature class of solid-state quantum emitter—with low-loss Si
3
N
4
waveguides. We demonstrate a highly efficient optical interface between Si
3
N
4
waveguides and single-quantum dots in GaAs geometries, with performance approaching that of devices optimized for each material individually. This includes quantum dot radiative rate enhancement in microcavities, and a path for reaching the non-perturbative strong-coupling regime.
Effective use of single emitters in quantum photonics requires coherent emission, strong light-matter coupling, low losses and scalable fabrication. Here, Davanco et al. stride toward this goal by hybrid on-chip integration of Si3N4 waveguides and GaAs nanophotonic geometries with InAs quantum dots. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/s41467-017-00987-6 |