Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants

Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1–15 at.%. Polarity inversion from Al-polar to...

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Published inScientific reports Vol. 10; no. 1; p. 4369
Main Authors Anggraini, Sri Ayu, Uehara, Masato, Hirata, Kenji, Yamada, Hiroshi, Akiyama, Morito
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 09.03.2020
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Abstract Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1–15 at.%. Polarity inversion from Al-polar to N-polar also occurred when MgSi was codoped into AlN with Mg to Si ratio was less than 1. However, the polarity can be reversed from N-polar to Al-polar when the ratio of Mg and Si was greater than 1. The effect of Si and MgSi addition was investigated with regards to their crystal structure, lattice parameters, polarity distribution and the oxidation state of each elements. Furthermore, the effect of intermediate layer as well as the presence of point defect (i.e. aluminum vacancy) were investigated and how these factors influence the polarity of the thin films are discussed in this report.
AbstractList Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1–15 at.%. Polarity inversion from Al-polar to N-polar also occurred when MgSi was codoped into AlN with Mg to Si ratio was less than 1. However, the polarity can be reversed from N-polar to Al-polar when the ratio of Mg and Si was greater than 1. The effect of Si and MgSi addition was investigated with regards to their crystal structure, lattice parameters, polarity distribution and the oxidation state of each elements. Furthermore, the effect of intermediate layer as well as the presence of point defect (i.e. aluminum vacancy) were investigated and how these factors influence the polarity of the thin films are discussed in this report.
Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1-15 at.%. Polarity inversion from Al-polar to N-polar also occurred when MgSi was codoped into AlN with Mg to Si ratio was less than 1. However, the polarity can be reversed from N-polar to Al-polar when the ratio of Mg and Si was greater than 1. The effect of Si and MgSi addition was investigated with regards to their crystal structure, lattice parameters, polarity distribution and the oxidation state of each elements. Furthermore, the effect of intermediate layer as well as the presence of point defect (i.e. aluminum vacancy) were investigated and how these factors influence the polarity of the thin films are discussed in this report.Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1-15 at.%. Polarity inversion from Al-polar to N-polar also occurred when MgSi was codoped into AlN with Mg to Si ratio was less than 1. However, the polarity can be reversed from N-polar to Al-polar when the ratio of Mg and Si was greater than 1. The effect of Si and MgSi addition was investigated with regards to their crystal structure, lattice parameters, polarity distribution and the oxidation state of each elements. Furthermore, the effect of intermediate layer as well as the presence of point defect (i.e. aluminum vacancy) were investigated and how these factors influence the polarity of the thin films are discussed in this report.
ArticleNumber 4369
Author Akiyama, Morito
Anggraini, Sri Ayu
Yamada, Hiroshi
Hirata, Kenji
Uehara, Masato
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  givenname: Masato
  surname: Uehara
  fullname: Uehara, Masato
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  givenname: Kenji
  surname: Hirata
  fullname: Hirata, Kenji
  organization: Advanced Manufacturing Research Institute (AMRI), National Institute of Advanced Industrial Science and Technology (AIST)
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  givenname: Hiroshi
  surname: Yamada
  fullname: Yamada, Hiroshi
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  givenname: Morito
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Snippet Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride...
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StartPage 4369
SubjectTerms 639/301
639/638
Aluminum
Crystal structure
Humanities and Social Sciences
multidisciplinary
Oxidation
Point defects
Polarity
Science
Science (multidisciplinary)
Thin films
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Title Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants
URI https://link.springer.com/article/10.1038/s41598-020-61285-8
https://www.ncbi.nlm.nih.gov/pubmed/32152367
https://www.proquest.com/docview/2375479902
https://www.proquest.com/docview/2375895303
https://pubmed.ncbi.nlm.nih.gov/PMC7062775
Volume 10
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