Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants

Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1–15 at.%. Polarity inversion from Al-polar to...

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Bibliographic Details
Published inScientific reports Vol. 10; no. 1; p. 4369
Main Authors Anggraini, Sri Ayu, Uehara, Masato, Hirata, Kenji, Yamada, Hiroshi, Akiyama, Morito
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 09.03.2020
Nature Publishing Group
Subjects
639/301
639/638
Aluminum
Crystal structure
Humanities and Social Sciences
multidisciplinary
Oxidation
Point defects
Polarity
Science
Science (multidisciplinary)
Thin films
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Summary:Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1–15 at.%. Polarity inversion from Al-polar to N-polar also occurred when MgSi was codoped into AlN with Mg to Si ratio was less than 1. However, the polarity can be reversed from N-polar to Al-polar when the ratio of Mg and Si was greater than 1. The effect of Si and MgSi addition was investigated with regards to their crystal structure, lattice parameters, polarity distribution and the oxidation state of each elements. Furthermore, the effect of intermediate layer as well as the presence of point defect (i.e. aluminum vacancy) were investigated and how these factors influence the polarity of the thin films are discussed in this report.
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-020-61285-8