Out-of-phase power divider based on two-layer SIW

• Published in: Electronics letters Vol. 50; no. 14; pp. 1005 - 1007
• Main Authors: Chen, Qi, Xu, J
• Format: Journal Article
• Language: English
• Published: Stevenage The Institution of Engineering and Technology 03.07.2014; Institution of Engineering and Technology; John Wiley & Sons, Inc
• Subjects: Applied sciences; Circuit properties; Circuits; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Joining; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Microwave technology; out‐of‐phase power divider; planar circuits; Power dividers; substrate integrated waveguide; substrate integrated waveguides; two‐layer SIW; Walls; Waveguides; substrate integrated waveguide; planar circuits; power dividers; two-layer SIW; out-of-phase power divider; substrate integrated waveguides; Substrate integrated circuit; Power divider; Transmission line; Microwave circuit; Passband; Planar device; Waveguide
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2014.0406

A novel out-of-phase power divider based on a two-layer substrate integrated waveguide (SIW) is presented. The input of the proposed power divider in one substrate is coupled to four outputs in another substrate through a slot located in the broad wall of the waveguide. By employing a step SIW in the input structure, the power divider exhibits a wide passband and good output imbalance. The advantages of this structure are its good performance, low profile and ease of fabrication. The SIW structure could be integrated easily with other planar circuits.