Activation of Mg implanted in GaN by multicycle rapid thermal annealing

• Published in: Electronics letters Vol. 50; no. 3; pp. 197 - 198
• Main Authors: Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R
• Format: Journal Article
• Language: English
• Published: Stevenage The Institution of Engineering and Technology 30.01.2014; Institution of Engineering and Technology; John Wiley & Sons, Inc
• Subjects: Activation; Annealing; Applied sciences; deep acceptor; Devices; Electronics; Exact sciences and technology; gallium compounds; Gallium nitrides; GaN:Mg; III‐V semiconductors; Ion implantation; Magnesium; Medical devices; Microelectronic fabrication (materials and surfaces technology); multicycle rapid thermal annealing; Organic and inorganic circuits and devices; rapid thermal annealing; semiconductor doping; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; semiconductor epitaxial layers; wide band gap semiconductors; semiconductor doping; gallium compounds; deep acceptor; GaN:Mg; ion implantation; magnesium; wide band gap semiconductors; semiconductor epitaxial layers; activation; rapid thermal annealing; multicycle rapid thermal annealing; III-V semiconductors; Rapid thermal annealing; Ion implantation; p type semiconductor; Magnesium ion; Activation; High temperature; Gallium nitride
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2013.3214

A long-standing goal of GaN device research has been the development of a reliable, well-controlled process for p-GaN formation by ion implantation. Results to date have indicated an activation of 1% or less using high-temperature rapid thermal annealing (RTA) techniques and coimplantation. Although Mg is a relatively deep acceptor, this is still much less than the theoretically achievable value (8.2% based on the 160 meV acceptor level). A multicycle RTA process is presented that is capable of achieving up to 8% activation of the Mg-implanted GaN. This approaches the theoretical value, and represents a significant step in GaN device research.