Fluoroaromatic Resists for 157-nm Lithography

• Published in: Journal of Photopolymer Science and Technology Vol. 15; no. 4; pp. 655 - 666
• Main Authors: Fedynyshyn, Theodore H., Kunz, Roderick R., Sinta, Roger F., Sworin, Michael, Mowers, William A., Goodman, Russell B., Cabral, Alberto
• Format: Journal Article
• Language: English
• Published: Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.01.2002; Japan Science and Technology Agency
• Subjects: 157nm lithography; fluoropolymer resist; plasma etching
• ISSN: 0914-9244; 1349-6336
• DOI: 10.2494/photopolymer.15.655

Lithography with 157-nm fluorine lasers is rapidly emerging as the next evolutionary step in optical lithography and is clearly seen as the likely successor to 193-nm lithography. As has been demonstrated with the transition to shorter wavelengths in the past, the resist materials that were developed for the longer wavelength applications are too absorbent for practical use as high-resolution single layer resist with 157-nm radiation. Fluorine containing polymers have been demonstrated to be more transparent in this spectral region than pure hydrocarbon polymers. We have developed and evaluated a number of unique fluoroaromatic-based 157-nm resists including 4-hexafluoroisopropanol styrene copolymers with t-butyl acrylate and acetyl blocked 4-hexafluoroisopropanol styrene. Our recent resist designs are shown to have imaging capability down to 70nm with a 0.60 NA microstepper.