Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM
Oxygen vacancy (V O ) strongly affects the properties of oxides. In this study, we used X-ray diffraction (XRD) to study changes in the V O concentration as a function of the Co-doping level of ZnO. Rietveld refinement yielded a different result from that determined via X-ray photoelectron spectrosc...
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Published in | Nanoscale research letters Vol. 10; no. 1; p. 186 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer US
18.04.2015
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Oxygen vacancy (V
O
) strongly affects the properties of oxides. In this study, we used X-ray diffraction (XRD) to study changes in the V
O
concentration as a function of the Co-doping level of ZnO. Rietveld refinement yielded a different result from that determined via X-ray photoelectron spectroscopy (XPS), but additional maximum entropy method (MEM) analysis led it to compensate for the difference. V
O
tended to gradually decrease with increased Co doping, and ferromagnetic behavior was not observed regardless of the Co-doping concentration. MEM analysis demonstrated that reliable information related to the defects in the ZnO-based system can be obtained using X-ray diffraction alone. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1931-7573 1556-276X |
DOI: | 10.1186/s11671-015-0887-2 |