Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM

Oxygen vacancy (V O ) strongly affects the properties of oxides. In this study, we used X-ray diffraction (XRD) to study changes in the V O concentration as a function of the Co-doping level of ZnO. Rietveld refinement yielded a different result from that determined via X-ray photoelectron spectrosc...

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Published inNanoscale research letters Vol. 10; no. 1; p. 186
Main Authors Park, Ji Hun, Lee, Yeong Ju, Bae, Jong-Seong, Kim, Bum-Su, Cho, Yong Chan, Moriyoshi, Chikako, Kuroiwa, Yoshihiro, Lee, Seunghun, Jeong, Se-Young
Format Journal Article
LanguageEnglish
Published New York Springer US 18.04.2015
Springer Nature B.V
Subjects
Chemistry and Materials Science
Low Dimensional Electric and Photonic Materials and Devices
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
ZnO
Rietveld refinement
Co-doped ZnO
Maximum entropy method
Oxygen vacancy
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Summary:Oxygen vacancy (V O ) strongly affects the properties of oxides. In this study, we used X-ray diffraction (XRD) to study changes in the V O concentration as a function of the Co-doping level of ZnO. Rietveld refinement yielded a different result from that determined via X-ray photoelectron spectroscopy (XPS), but additional maximum entropy method (MEM) analysis led it to compensate for the difference. V O tended to gradually decrease with increased Co doping, and ferromagnetic behavior was not observed regardless of the Co-doping concentration. MEM analysis demonstrated that reliable information related to the defects in the ZnO-based system can be obtained using X-ray diffraction alone.
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ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-015-0887-2